Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double freedom layer vertical ferromagnetism tunnel junction structure

A ferromagnetic and tunnel junction technology, applied in the field of magnetic random access memory, can solve problems such as destroying magnetic units, and achieve the effect of reducing energy loss and reducing critical current

Inactive Publication Date: 2010-06-09
UNIV OF SCI & TECH BEIJING
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But usually, the critical current density required by CIMS is as high as 10 7 A / cm 2 , such a high current density would destroy the magnetic unit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double freedom layer vertical ferromagnetism tunnel junction structure
  • Double freedom layer vertical ferromagnetism tunnel junction structure
  • Double freedom layer vertical ferromagnetism tunnel junction structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] According to the above structure, the following 44 kinds of MTJ multilayer film structures were prepared by magnetron sputtering or molecular beam epitaxy, and MTJ devices were prepared by electron beam printing and ion etching: its characteristic is that the working current is perpendicular to plane, and the pinning layer and free layer 1 are the film planes with magnetic anisotropy perpendicular to the easy axis, and the free layer 2 is the film plane with magnetic anisotropy parallel to the easy axis. The detailed preparation process of the above MTJ is as follows: the background vacuum degree of the sputtering chamber is 2×10 -5 Pa, the pressure of argon (99.99%) during sputtering is 0.5Pa; the substrate is cooled with circulating water, and a magnetic field of 50Oe is added to the direction of the pinned layer and the free layer 1 perpendicular to the substrate to induce a vertical easy magnetization direction; A magnetic field of 250Oe is added to the free layer 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A dual free layer vertical magnetic tunnel joint structure belongs to magnetic random memory technical field. The first layer of the provided dual free layer vertical magnetic tunnel joint (MTJ) structure is a bottom electrode layer on which sequentially disposed with an antimagnetic layer, a pinned layer, an insulation layer, a first free layer, a second free layer, a top electrode layer. The first free layer and the second free layer form the dual free layer structure. The pinned layer and the first free layer are magnetic anisotropy c-axis orientation film material, the second free layer isin-plane magnetic anisotropy c-axis material with anisotropy value larger than 35KA / m. The structure has characteristic of low write-in current, capable of realizing high memory accuracy, suitable for being used in devices such as novel magnetic sensor or magnetic random memory, etc.

Description

technical field [0001] The invention belongs to the technical field of magnetic random storage, and in particular provides a double-free-layer vertical ferromagnetic tunnel junction (MTJ) structure. This new structure has low write current characteristics, can realize ultra-high storage density, and will be widely used into devices such as new magnetic sensors or magnetic random access memory devices. technical background [0002] With the continuous development of the information industry, there are higher and higher requirements for information storage technology, and random access memory with higher density, higher speed, lower cost and low power consumption is expected. At present, computer random access memory mostly adopts volatile dynamic and static random access memory (DRAM and SRAM) composed of silicon integrated circuits. DRAM has a large storage capacity and low price, but its speed is slow; the speed of SRAM can reach nanosecond level, but The storage density i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L27/22G11C11/15G11C11/16H01F10/32
Inventor 姜勇包瑾徐晓光
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com