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MTJ device

A device and reference layer technology, applied in the direction of magnetic field-controlled resistors, material selection, etc., can solve the problems of large write current, small write current, read disturbance device stability, etc., to reduce critical current and write The effect of current

Active Publication Date: 2021-06-11
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Research shows that the difficulty of free layer flipping directly affects the write power consumption of MRAM
If the free layer is easy to flip, the write current is small and the power consumption of the device is low, but there are problems of read disturbance and device stability; Increase the risk of the current driving the reference layer to flip

Method used

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Embodiment 1

[0029] An embodiment of the present invention provides an MTJ device, such as figure 1 As shown, it includes a bottom electrode 100, a top electrode 110, and a stacked structure between the bottom electrode 100 and the top electrode 110. The material of the bottom electrode 100 is selected from Ta, Pt, W, Cu, Ti, TiN, TaN and Ru. Any one, the material of the top electrode 110 is selected from any one of Ta, Al, Cu, Ti, TiN, TaN and Ru. The laminated structure includes: a reference layer 101, a barrier layer 102, a free layer 103, an antiferromagnetic layer 104, a first coupling layer 105, a spin polarized layer 106 and a covering layer 107 stacked in sequence from bottom to top, wherein ,

[0030] The reference layer 101 has a fixed magnetization approximately perpendicular to the plane of the reference layer 101; the free layer 103 has a magnetization approximately perpendicular to the plane of the free layer 103 and the magnetization direction can be approximately parallel ...

Embodiment 2

[0041] Another embodiment of the present invention provides an MTJ device, such as figure 2 As shown, it includes a bottom electrode 200, a top electrode 210, and a stacked structure between the bottom electrode 200 and the top electrode 210. The material of the bottom electrode 200 is selected from Ta, Pt, W, Cu, Ti, TiN, TaN and Ru. Any one, the material of the top electrode 210 is selected from any one of Ta, Al, Cu, Ti, TiN, TaN and Ru. The stacked structure includes: a pinned layer 201, a second coupling layer 202, a reference layer 203, a barrier layer 204, a free layer 205, an antiferromagnetic layer 206, a first coupling layer 207, a self- spin polarized layer 208 and cover layer 209, wherein,

[0042] The reference layer 203 has a fixed magnetization approximately perpendicular to the plane of the reference layer 203; the free layer 205 has a magnetization approximately perpendicular to the plane of the free layer 205 and the magnetization direction may be approximate...

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Abstract

The invention provides an MTJ device, and the device comprises a reference layer, a barrier layer, a free layer, an antiferromagnetic layer, a first coupling layer, a spin polarization layer and a covering layer which are stacked, wherein the reference layer has fixed magnetization approximately perpendicular to the plane of the reference layer; the free layer has a magnetization substantially perpendicular to a plane of the free layer and a magnetization direction is switchable between a magnetization direction substantially parallel to the reference layer and a magnetization direction substantially antiparallel to the reference layer; the spin polarization layer has a fixed magnetization substantially perpendicular to a plane of the spin polarization layer; the antiferromagnetic layer is in contact with the free layer to form an antiferromagnetic / ferromagnetic interface. The write current of the MTJ device can be reduced, and the stability of the device is ensured.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to an MTJ device. Background technique [0002] Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM for short) is a new type of non-volatile memory, and its core storage unit is an MTJ (Magnetic Tunnel Junctions, magnetic tunnel junction) device. The MTJ device is mainly composed of a reference layer, an insulating barrier layer and a free layer. The magnetization direction of the reference layer is fixed and does not flip during device operation; the magnetization direction of the free layer is collinear (parallel or antiparallel) to the reference layer. By using the spin torque of electrons, the magnetization direction of the free layer is reversed, so that the reference layer and the free layer magnetization direction are parallel or antiparallel, corresponding to the low resistance state (Rp) and the high resistance state (Rap), which can be used to write Enter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10
CPCH10N50/85H10N50/10
Inventor 孙一慧
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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