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Method for growing MgxZn1-xO film by electron-beam evaporation

A technology of electron beam evaporation, mgxzn1-xo, applied in the direction of vacuum evaporation plating, ion implantation plating, metal material coating technology, etc., can solve the problems of complicated operation and high price, and achieve simple preparation process, low cost, Effect of avoiding sputter damage

Inactive Publication Date: 2008-07-02
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that most of the equipment used in the prior art is expensive and complicated to operate, the present invention provides an electron beam evaporation growth Mg x Zn 1-x O thin film method, using electron beam evaporation equipment to make the composite target formed by sintering polycrystalline MgO and ZnO powder evaporated by electron beam heating, and deposited on the substrate to form Mg x Zn 1-x O semiconductor alloy thin film, simple preparation process and low cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1, at different growth temperatures, Mg was grown on a quartz substrate x Zn 1-x O film:

[0015] Firstly, the quartz substrate was ultrasonically cleaned with acetone, ethanol, and deionized water, and then cleaned with high-purity N 2 Blow dry, put it on the splint and clamp it, put it in the bell jar at a position 15cm above the crucible, press the heating electric furnace wire on it; put the MgZnO ceramic block in the crucible, and place it properly. Cover the bell jar and vacuum up to 3×10 -3 Pa, start growing. Turn on the power switch of the electric control cabinet--filament switch--preheat the filament at 12A for 5 minutes--turn on the deflection and focus switch--turn on the high voltage--properly increase the voltage and increase the filament current--adjust the deflection X axis, Y axis, focus Minimize the electron beam spot on the target—increase the voltage and filament current; adjust the filament current and high voltage to keep the beam curre...

Embodiment 2

[0017] Embodiment 2, changing the beam current, under different evaporation energies, growing Mg on the quartz substrate x Zn 1-x O film:

[0018] The quartz substrate was ultrasonically cleaned with acetone, ethanol, and deionized water, and high-purity N 2 Blow dry, put it on the splint and clamp it, put it in the bell jar at a position 15cm above the crucible, press the heating electric furnace wire on it; put the MgZnO ceramic block in the crucible, and place it properly. Then cover the bell jar and vacuum up to 3×10 -3 Pa began to grow. Select the growth temperature of 290°C--300°C, and the vacuum degree during the growth process is 2×10 -2 Pa; adjust the filament current and high voltage to change the beam current, the beam current value is 20mA, 30mA or 40mA, and the film is grown under different evaporation energies, and the growth time is 50 minutes. Since the melting points of ZnO and MgO are different, changing the beam current can achieve the effect of adjusti...

Embodiment 3

[0019] Embodiment 3, change the molar ratio of MgO and ZnO in the MgZnO ceramic block, grow Mg on quartz x Zn 1-x O film:

[0020] Due to the different vapor pressures of MgO and ZnO, electron beam grown Mg x Zn 1-x The Mg content in the O thin film is higher than that in the MgZnO ceramic bulk. At a substrate temperature of 290°C--300°C, a beam current of 30mA, and a vacuum of 3×10 -2 Mg was grown under the condition that the molar contents of Pa and MgO were 5%, 10%, 20%, 40% or 50% respectively x Zn 1-x O film, the growth time was 30 min. Mg grown under the condition of different molar content of MgO x Zn 1-x O thin films were tested, and the quality of the results obtained with 40% and 50% ceramic blocks was relatively good, and the absorption edge was relatively red-shifted compared with other components.

[0021] The substrate in the above embodiments can also be sapphire.

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Abstract

The invention belongs to the field of semiconductor photoelectric material technology and relates to a method for growing an MgxZn1-xO film by electron beam evaporation. A composite target formed by sintering polycrystalline MgO and ZnO powder is evaporated by electron beam heating by electron beam evaporating equipment and is deposed on a substrate to form the MgxZn1-xO semiconductor alloy thin film. The invention has simple preparation process and low cost, and is suitable for preparing thin film used for UV detectors with wavelength of 280 to 220 nm.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor optoelectronic materials, and relates to a method of growing Mg by using electron beam evaporation (electron beam evaporation) equipment. x Zn 1-x A method for semiconductor alloy thin films. Background technique: [0002] With the maturity of infrared countermeasure technology, the hit accuracy of infrared guidance and the accuracy of infrared warning are seriously threatened. Therefore, in recent years, the development of detectors in the deep ultraviolet band (sun blind zone, 280-220nm) has been started in developed countries in the world. , and made significant progress. Since the solar radiation in this band (280-220nm) is basically zero in our atmosphere, especially in the atmosphere near the surface of the earth, this band is not affected by solar radiation, forming a so-called "solar blind zone". Therefore, the signal detected under such a background has high sensitivity and good...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/08C23C14/54
Inventor 张吉英赵延民吕有明申德振张振中李柄辉姚斌赵东旭范希武
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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