Method for growing MgxZn1-xO film by electron-beam evaporation
A technology of electron beam evaporation, mgxzn1-xo, applied in the direction of vacuum evaporation plating, ion implantation plating, metal material coating technology, etc., can solve the problems of complicated operation and high price, and achieve simple preparation process, low cost, Effect of avoiding sputter damage
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Embodiment 1
[0014] Example 1, at different growth temperatures, Mg was grown on a quartz substrate x Zn 1-x O film:
[0015] Firstly, the quartz substrate was ultrasonically cleaned with acetone, ethanol, and deionized water, and then cleaned with high-purity N 2 Blow dry, put it on the splint and clamp it, put it in the bell jar at a position 15cm above the crucible, press the heating electric furnace wire on it; put the MgZnO ceramic block in the crucible, and place it properly. Cover the bell jar and vacuum up to 3×10 -3 Pa, start growing. Turn on the power switch of the electric control cabinet--filament switch--preheat the filament at 12A for 5 minutes--turn on the deflection and focus switch--turn on the high voltage--properly increase the voltage and increase the filament current--adjust the deflection X axis, Y axis, focus Minimize the electron beam spot on the target—increase the voltage and filament current; adjust the filament current and high voltage to keep the beam curre...
Embodiment 2
[0017] Embodiment 2, changing the beam current, under different evaporation energies, growing Mg on the quartz substrate x Zn 1-x O film:
[0018] The quartz substrate was ultrasonically cleaned with acetone, ethanol, and deionized water, and high-purity N 2 Blow dry, put it on the splint and clamp it, put it in the bell jar at a position 15cm above the crucible, press the heating electric furnace wire on it; put the MgZnO ceramic block in the crucible, and place it properly. Then cover the bell jar and vacuum up to 3×10 -3 Pa began to grow. Select the growth temperature of 290°C--300°C, and the vacuum degree during the growth process is 2×10 -2 Pa; adjust the filament current and high voltage to change the beam current, the beam current value is 20mA, 30mA or 40mA, and the film is grown under different evaporation energies, and the growth time is 50 minutes. Since the melting points of ZnO and MgO are different, changing the beam current can achieve the effect of adjusti...
Embodiment 3
[0019] Embodiment 3, change the molar ratio of MgO and ZnO in the MgZnO ceramic block, grow Mg on quartz x Zn 1-x O film:
[0020] Due to the different vapor pressures of MgO and ZnO, electron beam grown Mg x Zn 1-x The Mg content in the O thin film is higher than that in the MgZnO ceramic bulk. At a substrate temperature of 290°C--300°C, a beam current of 30mA, and a vacuum of 3×10 -2 Mg was grown under the condition that the molar contents of Pa and MgO were 5%, 10%, 20%, 40% or 50% respectively x Zn 1-x O film, the growth time was 30 min. Mg grown under the condition of different molar content of MgO x Zn 1-x O thin films were tested, and the quality of the results obtained with 40% and 50% ceramic blocks was relatively good, and the absorption edge was relatively red-shifted compared with other components.
[0021] The substrate in the above embodiments can also be sapphire.
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