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Method for preparing micro-wave dielectric adjustable strontium bismuth titanate film

A strontium bismuth titanate and microwave dielectric technology, applied in the direction of inorganic insulators, ceramics, etc., can solve the problems of high dielectric loss, film adjustable characteristics and quality factor reduction, etc., to achieve reduced dielectric loss, good market prospects, low cost effect

Inactive Publication Date: 2008-06-25
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Barium strontium titanate thin film material has a high dielectric constant and large dielectric tunable characteristics, but its dielectric loss (tanδ) is relatively high, resulting in a low electrical quality factor Q (=1 / tanδ), which affects Focusing on the application of barium strontium titanate film in tunable microwave devices, researchers from various countries are currently trying to solve these problems by doping and replacing barium strontium titanate, for example, by doping oxides such as magnesium oxide (MgO) It can reduce the dielectric loss of barium strontium titanate very well, but at the cost of sacrificing the tunable characteristics of the material, the tunable characteristics and quality factor of the film are reduced

Method used

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  • Method for preparing micro-wave dielectric adjustable strontium bismuth titanate film
  • Method for preparing micro-wave dielectric adjustable strontium bismuth titanate film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] a. Weigh 0.7 grams of analytically pure bismuth nitrate and 5.95 grams of strontium acetate and dissolve them in 30ml of glacial acetic acid with full stirring at 80°C, and azeotrope at 120°C for 5 minutes to remove crystal water and part of the solvent. After cooling, 10.2 grams of titanium Tetrabutyl acetate and 6 grams of acetylacetone were mixed uniformly at a molar ratio of 1:2 and then added to the mixed solution of bismuth nitrate and strontium acetate. At the same time, 40ml of ethylene glycol ether was added and stirred at room temperature for 30 minutes to finally obtain a clear The concentration is 0.5mol / L, satisfying the stoichiometric ratio Bi 0.05 Sr 0.925 TiO 3 60ml of strontium bismuth titanate sol precursor;

[0022] b. Using the spin coating process, the obtained stable strontium bismuth titanate precursor solution is deposited on the sapphire substrate, and the film is homogenized at 3000 rpm for 25 seconds, and the obtained wet film is placed in a...

Embodiment 2

[0026] a. Weigh 0.485 grams of analytically pure bismuth nitrate and 3.972 grams of strontium acetate and dissolve them in 45ml of glacial acetic acid with full stirring at 80°C, and azeotrope at 120°C for 5 minutes to remove crystal water and part of the solvent. After cooling, 6.8 grams of titanium Tetrabutyl acetate and 4 grams of acetylacetone were mixed uniformly at a molar ratio of 1:2 and then added to the mixed solution of bismuth nitrate and strontium acetate, while adding 20ml of ethylene glycol ether and stirring at room temperature for 30 minutes to finally obtain clear The concentration is 0.4mol / L, satisfying the stoichiometric ratio Bi 0.05 Sr 0.925 TiO 3 50ml of strontium bismuth titanate sol precursor;

[0027] b, using spin coating process, the resulting stable strontium bismuth titanate precursor solution is deposited on the Pt plated substrate (Pt / Ti / SiO 2 / Si) at 3000 rpm for 25 seconds, and the obtained wet film was dried at 350° C. and annealed at 650...

Embodiment 3

[0031] a. Weigh 0.97g of analytically pure bismuth nitrate and 3.65g of strontium acetate and dissolve them in 48ml of glacial acetic acid with full stirring at 80°C, and azeotrope at 120°C for 5 minutes to remove crystal water and part of the solvent. After cooling, dissolve 6.8g of titanic acid Tetrabutyl ester and 4 grams of acetylacetone were mixed uniformly at a molar ratio of 1:2 and then added to the mixed solution of bismuth nitrate and strontium acetate. Simultaneously, 15ml of ethylene glycol ether was added and stirred at room temperature for 30 minutes to finally obtain clear The concentration is 0.4mol / L, satisfying the stoichiometric ratio Bi 0.1 Sr 0.85 TiO 3 50ml of strontium bismuth titanate sol precursor;

[0032] b, using spin coating process, the resulting stable strontium bismuth titanate precursor solution is deposited on the Pt plated substrate (Pt / Ti / SiO 2 / Si) at 3000 rpm for 25 seconds, and the obtained wet film was dried at 350° C. and annealed at...

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Abstract

The invention discloses a preparation method of strontium bismuth titanate microwave dielectric tunable membrane with perovskite structure. The Sol-Gel technique is adopted; the pure strontium acetate, the bismuth nitrate and the tetrabutyl titanate are the starting materials; the glacial acetic acid and the glycol ether are the solvent, the acetylacetone is the stabilizing agent, and the strontium bismuth titanate sol with chemical compound of BixSr1-1.5xTiO3 is synthesized. With the rapid thermal process technique, the strontium bismuth titanate membrane is with perovskite structure is produced on the uropatagia. By utilizing the microstructure modification of the strontium bismuth titanate membrane, the dielectric loss of the membrane is decreased while the tunable character of the membrane is not decreased, the quality factor of the membrane is improved, and a practical microwave dielectric tunable membrane of novel type is obtained thereby.

Description

technical field [0001] The invention relates to a preparation method of a microwave dielectric thin film, in particular to a preparation method of a perovskite structure strontium bismuth titanate thin film with adjustable microwave dielectric properties. Background technique [0002] With the development of modern communication technology, especially the development of mobile communication technology, the miniaturization requirements of microwave devices and systems are increasingly urgent. Thin film materials with microwave dielectric tunable properties have low operating voltage, fast response speed and easy integration with microwave circuits. It can be used to prepare tunable dielectric microwave devices such as microwave phase shifters, coplanar waveguides, and tunable filters. At present, most of the research work on tunable dielectric materials focuses on ferroelectric strontium titanate (Ba 0.5 Sr 0.5 TiO 3 ) films and strontium titanate (SrTiO 3 ) on the film ma...

Claims

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Application Information

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IPC IPC(8): C04B35/462C04B35/624H01B3/12
Inventor 史鹏任巍赵敏吴小清魏晓勇陈晓峰姚熹
Owner XI AN JIAOTONG UNIV
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