Silicon thin-film photocell electric pole pattern and etching method

Abstract

The invention relates to an etching technology for etching a pattern on a photocell with a silicon film, and an etching agent as well as an etching method for manufacturing amorphous silicon solar cells and a pattern on an aluminum dorsal electrode. The purpose of the invention is to provide a cell with a silicon film with a complicated pattern, a method for etching an aluminum film, and an etching agent. Printing ink etched by a silk-screen is unlikely to destroy amorphous silicon and an ITO conductive film on a lower layer when etching the aluminum film. The raw materials in the printing oil for etching are made up of the following ingredients according to the weight ratio: 3 to 7 portions of deionized water, 1 to 3 portions of bluestone, 1 to 3 portions of ferric trichloride, 0.3 to 0. 8 wt per cent of ammonium persulfate, and 2 to 4 portions of starch. The raw materials are mixed at a temperature of 60 DEG C and w-090 (0.1 to 0.5 per cent) and absolute alcohol (2-5 wt per cent) are added at last.

Description

Technical field [0001] The invention relates to an etching technology for a silicon thin film photovoltaic cell pattern, specifically an etchant and an etching method for producing an amorphous silicon solar cell and an aluminum back electrode pattern. Background technique [0002] At present, the production of silicon thin-film solar cells, especially the production of integrated amorphous silicon solar cells, and the preparation of aluminum back electrodes generally use mask frames to steam aluminum to form isolation lines between battery packs, which is called dry method, including laser, ion Beam etching and other techniques. For special-shaped curves with wide isolation lines or complex patterns, wet and chemical etching techniques are generally used. See Chinese patent 03124018.6 which discloses "an etchant and etching method" through wet etching the etchant of the pattern formed on the metal film for the production of semiconductor elements. For use on a multilayer ...

AI Technical Summary

Problems solved by technology

Using this method to etch the aluminum film requires an etching tank to contain the etching solution. The process is complex, requiring multiple processes before and after, and a large amount of etching solution is used, which is easy to pollute the environment and equipment. The etching solution will penetrate into the ITO film and silicon film layer. Affect battery performance

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