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Method for preparing silicon carbide nano-wire with periodical twin crystal structure

A silicon carbide nanowire, periodic technology, applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problem that the preparation method of silicon carbide nanowires has not been reported.

Inactive Publication Date: 2008-05-28
SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation method of SiC nanowires with periodic twin structure has not been reported

Method used

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  • Method for preparing silicon carbide nano-wire with periodical twin crystal structure

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Experimental program
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Effect test

Embodiment 1

[0021] 1. Weigh 15 grams of biphenyl and dissolve it in 50 milliliters of acetone, add 0.5 grams of ferric nitrate, and stir to dissolve it.

[0022] 2. Under the condition of constant stirring, add 50 ml of ethyl orthosilicate to the above solution, mix well, add 0.2 g of oxalic acid, and hydrolyze for 24 hours at room temperature to form a sol.

[0023] 3. Add 2 g of hexamethylenetetramine into the sol to form a gel, and dry the resulting gel at 80° C. for 24 hours.

[0024] 4. Put the dry gel into a tube-type high-temperature furnace, pass in argon, heat up to 1200°C, and react at a constant temperature for 10 hours, then naturally cool to room temperature under an argon atmosphere.

[0025] 5. The obtained reaction product is oxidized in the air at 700°C for 3 hours, then pickled with a mixed acid with a volume ratio of HCl:HF of 1:2, and finally washed with water and dried to obtain the product shown in Figures 1-4. Silicon carbide nanowires with periodic twin structure....

Embodiment 2

[0027] 1. Weigh 20g of biphenyl and dissolve it in 70ml of acetone, add 1g of cobalt nitrate and stir to dissolve it.

[0028] 2. Under the condition of constant stirring, add 70 ml of ethyl orthosilicate to the above solution, mix well, add 0.4 g of oxalic acid, and hydrolyze for 24 hours at room temperature to form a sol.

[0029] 3. 4 grams of hexamethylenetetramine was added to the sol to form a gel, and the obtained gel was dried at 100° C. for 12 hours.

[0030] 4. Put the dry gel into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1300°C, and react at constant temperature for 7 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0031] 5. The obtained reaction product is oxidized in air at 600°C for 4 hours, then pickled with a mixed acid with a volume ratio of HCl:HF of 1:3, and finally washed with water and dried to obtain the product shown in Figures 1-4. Silicon carbide nanowires with periodic twin s...

Embodiment 3

[0033] 1. Weigh 25 grams of biphenyl and dissolve it in 80 milliliters of acetone, add 1 gram of nickel nitrate, and stir to dissolve it.

[0034] 2. Under the condition of constant stirring, add 70 ml of ethyl orthosilicate to the above solution, after mixing evenly, add 0.3 g of oxalic acid, and hydrolyze for 24 hours at room temperature to form a sol.

[0035] 3. Add 3 grams of hexamethylenetetramine into the sol to form a gel, and dry the resulting gel at 110° C. for 24 hours.

[0036] 4. Put the dry gel into a tube-type high-temperature furnace, pass in argon gas, raise the temperature to 1350°C, and react at constant temperature for 6 hours, then cool it naturally to room temperature under an argon gas atmosphere.

[0037] 5. The obtained reaction product is oxidized in the air at 700°C for 5 hours, then pickled with a mixed acid with a volume ratio of HCl:HF of 1:4, and finally washed with water and dried to obtain the product shown in Figures 1-4. Silicon carbide nano...

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Abstract

The invention relates to a preparation method of silicon carbide nano-wire having periodic twin structure. Biphenyl is dissolved in acetone; nitrate is added and dissolved, tetraethyl orthosilicate is added into the solution and well mixed to be hydrolyzed to form sol; hexamethylene tetramine is added in the sol to form gel and the obtained gel is dried for 5-30h at the temperature of 80-110 DEG C to obtain dry gel; the dry gel is heated to 1200-1400 DEG C to be constantly reacted for 3-20h under the condition of argon, naturally cooled to room temperature, oxidized for 1-6h at the temperature of 600-800 DEG C, pickled by hydrochloride and hydrofluoric acid, then is cleaned by water and dried, and at last the silicon carbide nano-wire having periodic twin structure is obtained. The invention has the advantages of low production cost, low reaction temperature and simple and straightforward technique.

Description

technical field [0001] The invention relates to a method for preparing nanometer materials, in particular to a method for preparing silicon carbide nanowires with periodic twin structure. Background technique [0002] Linear nanomaterials have extremely important applications in electronics, optoelectronics, machinery, etc., and their excellent physical and chemical properties have attracted great attention of scientists. As an important semiconductor and ceramic material, silicon carbide nanowires have become one of the research hotspots because of their special physical and chemical properties. They have high physical and chemical stability, high conductivity, low dielectric constant, and band gap. The characteristics of large width, corrosion resistance and oxidation resistance make it have broad application prospects in high temperature, high frequency, and radiation-resistant semiconductor devices; excellent mechanical properties such as elasticity, hardness, and toughn...

Claims

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Application Information

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IPC IPC(8): C01B31/36B82B3/00
Inventor 郭向云王冬华靳国强
Owner SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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