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Beta -Ga2O3nano lines and gas sensors preparing method, and gas sensing method for realizing quick-speed response

A gas sensor and nanowire technology, applied in the direction of material resistance, etc., to achieve the effect of good stability, simple method and stable performance

Inactive Publication Date: 2008-03-05
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Beta -Ga2O3nano lines and gas sensors preparing method, and gas sensing method for realizing quick-speed response
  • Beta -Ga2O3nano lines and gas sensors preparing method, and gas sensing method for realizing quick-speed response
  • Beta -Ga2O3nano lines and gas sensors preparing method, and gas sensing method for realizing quick-speed response

Examples

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Embodiment 1

[0045] Example 1: β-Ga 2 o 3 Nanowire preparation method:

[0046] (1) 10 nanometers thick gold film is deposited on the base substrate;

[0047] (2) Put the gallium powder into the boat, place the substrate 1 cm away from the boat, heat and keep warm together;

[0048] (3) Put the alumina boat into the quartz tube, then put the quartz tube into the tube furnace, and then heat the tube furnace to 980°C for 1 hour;

[0049] (4) feed the nitrogen of 400sccm (milliliters / minute) in the heating furnace;

[0050] (5) After the tube furnace is cooled to room temperature, the product—β-Ga 2 o 3 Nanowires are grown on a substrate substrate;

[0051] The base substrate can be an N-type silicon substrate, a P-type silicon substrate, an insulating silicon substrate, or other high-temperature-resistant materials.

[0052] The gold film can be deposited by thermal evaporation, sputtering or electron beam evaporation, and the thickness of the gold film is 10 nanometers.

[0053] The...

Embodiment 2

[0054] Example 2: β-Ga 2 o 3 Preparation of nanowire gas sensor:

[0055] (1) A gold electrode with a thickness of 50nm is deposited by electron beam deposition to a thickness of 500nm, with SiO attached below 2 layer on the silicon substrate.

[0056] (2) The distance between the two electrodes is 1 μm. ;

[0057] (3) placing a single nanowire on the electrode;

[0058] (4) Lead connection. The resulting product is aged for 24 hours.

[0059] The substrates of the two electrodes are realized by photolithography on the ceramic sheet. And it is worth noting that the surface of the nanowires should be very smooth.

Embodiment 3

[0060] Embodiment 3: The present invention measures the current passing through the nanowire under different oxygen pressures, under the irradiation of ultraviolet light with a wavelength of 254nm without and with a bias voltage of 20V, and the results are shown in FIG. 3 . Figure 3(a) shows that the current is 26pA under no light condition, and the fluctuation is small under different oxygen pressure. On the contrary, under light conditions, the current rapidly increased to a certain value, reflecting the value of the oxygen pressure in the cavity, the currents were 0.56, 0.23, 0.15 and 0.095nA, and the oxygen pressure in the cavity was 22,540, 5000 and 20000Pa, respectively. The current decreases at a higher oxygen pressure, and the above conclusion is further proved by measuring the current value under the condition of continuously decreasing oxygen pressure [Figure 3(b)]. Comparing in Fig. 3(b), it can be seen that the nanowires are sensitive to oxygen only under irradiati...

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Abstract

The preparation method for nanometer lines comprises: coating a metal on the silicon substrate; placing the gallium powder into the boat; the substrate is placed at a location away from the boat in proper distance; heating and keeping the temperature; blowing nitrogen gas into the heating furnace; after cooling the heating furnace to the room temperature; the nanometer lines are formed in the substrate. The method for preparing the sensor comprises: depositing the golden electrode on the silicon substrate with SiO2 layer; the distance between two electrodes is 1 mu m; connecting single nanometer line to the electrode; connecting the lead; making aging process. The fast oxygen response of the sensor: at first, the free carrier concentration in the nanometer is very low; by adjusting the oxygen, its electric conductance is very week; under the illumination of the ultraviolet light, the current passing through the nanometer line is increased into a certain value, it show the oxygen concentration in short time; after closing the illumination, the photo-generated carriers are fast combined, the photo-driven oxygen sensing character disappears.

Description

technical field [0001] The present invention relates to β-Ga 2 o 3 The preparation of the nanowire and its gas sensor, and the gas sensing method that the sensor realizes the rapid response to oxygen under the irradiation of ultraviolet light. Background technique [0002] Due to the large specific surface area of ​​nanomaterials, their electrical properties are very sensitive to surface adsorption. When external environmental factors change, they will quickly cause changes in the surface, interface ions, and electron transport, which will significantly affect their resistance. The change in resistance can be used to Made into a sensor, it is characterized by high sensitivity. At present, many gas sensors have adopted nanoparticle structure. They have large specific surface area, high surface activity, and are very sensitive to the surrounding environment. However, the resistance of the sensor is large, and it is easy to agglomerate at high temperature, which seriously aff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 王太宏丰平张杰万青许春梅薛欣宇刘永刚虞红春
Owner HUNAN UNIV
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