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Metal anti-corrosion rinsing liquid used for semiconductor manufacture process

A cleaning liquid and semiconductor technology, applied in the field of cleaning liquid, can solve the problems of adverse effects of subsequent processes, narrow cleaning use range, insufficient cleaning efficiency, etc., and achieve the effects of improving flatness quality, reducing surface pitting, and reducing defects

Active Publication Date: 2012-02-29
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cleaning solution in the above-mentioned patent either contains toxic substances and is not friendly to the environment; or the cleaning efficiency is not high enough, or there are defects such as residues that have adverse effects on subsequent processes; or the cleaning application range is narrow, such as the US6443814 patent The cleaning solution can only clean wafers with copper metal layer

Method used

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  • Metal anti-corrosion rinsing liquid used for semiconductor manufacture process
  • Metal anti-corrosion rinsing liquid used for semiconductor manufacture process
  • Metal anti-corrosion rinsing liquid used for semiconductor manufacture process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A cleaning solution (pH=2.4) containing 2% citric acid (citric acid) and 10 ppm of polyacrylic acid (molecular weight: 5000) and water as the balance was used on the copper / silicon dioxide surface polished by the chemical mechanical polishing solution. (1) The process of polishing copper metal with chemical mechanical polishing liquid is: down pressure 1.0-2.0psi, polishing disc speed 50-70rpm, polishing head speed 70-90rpm, polishing liquid flow rate 200-300ml / min, polishing time 1-2min (2) then under pressure 1.5psi, the rotating speed of polishing disk 25rpm, polishing head rotating speed 25rpm, use traditional cleaning solution and this invention cleaning solution respectively, cleaning solution flow rate is at 300ml / min, polishing time 0.5-1min; (3) use Scrub the wafer surface with cleaning solution and polyvinyl alcohol (PVA) roller brush for 2 minutes, the rotation speed of the roller brush is 300rp, the rotation speed of the cleaning head is 280rpm, and the flow ...

Embodiment 2

[0043] A cleaning solution (pH=2.5) containing 0.5% polyamino polyether group tetramethylene phosphonic acid and water as the balance is used on the copper / silicon dioxide surface polished by the chemical mechanical polishing solution. (1) The process of polishing copper metal with chemical mechanical polishing liquid is: down pressure 1.0-2.0psi, polishing disc speed 50-70rpm, polishing head speed 70-90rpm, polishing liquid flow rate 200-300ml / min, polishing time 1-2min (2) then under pressure 1.5psi, the rotating speed of polishing disk 25rpm, polishing head rotating speed 25rpm, use traditional cleaning solution and this invention cleaning solution respectively, cleaning solution flow rate is at 300ml / min, polishing time 0.5-1min; (3) use Scrub the wafer surface with cleaning solution and polyvinyl alcohol (PVA) roller brush for 2 minutes, the rotation speed of the roller brush is 300rp, the rotation speed of the cleaning head is 280rpm, and the flow rate of cleaning solutio...

Embodiment 3

[0046] A cleaning solution (pH=2.5) containing 0.2% methanesulfonic acid, polyacrylic acid (molecular weight 5000) 5000ppm and water as the balance was used on the copper / silicon dioxide surface polished by the chemical mechanical polishing solution. (1) The process of polishing copper metal with chemical mechanical polishing liquid is: down pressure 1.0-2.0psi, polishing disc speed 50-70rpm, polishing head speed 70-90rpm, polishing liquid flow rate 200-300ml / min, polishing time 1-2min (2) then under pressure 1.5psi, the rotating speed of polishing disk 25rpm, polishing head rotating speed 25rpm, use traditional cleaning solution and this invention cleaning solution respectively, cleaning solution flow rate is at 300ml / min, polishing time 0.5-1min; (3) use Scrub the wafer surface with cleaning solution and polyvinyl alcohol (PVA) roller brush for 2 minutes, the rotation speed of the roller brush is 300rp, the rotation speed of the cleaning head is 280rpm, and the flow rate of c...

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PUM

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Abstract

The present invention relates to a metal anticorrosion cleaning liquor which can be used in the semiconductor production process. It is characterized by that said cleaning liquor includes one kind or several kinds of chemical additives which not only can be used for removing various residua from metal surface, but also can be used for effectively preventing metal surface from corroding.

Description

technical field [0001] The invention relates to a cleaning solution, in particular to a metal anti-corrosion cleaning solution used in semiconductor manufacturing processes. Background technique [0002] Typical cleaning solutions include deionized water, hydrogen peroxide solution and dilute ammonia water, which are mainly used to clean the residual liquid in the previous process, such as the residual polishing liquid on the metal surface after the chemical mechanical polishing process, after etching to remove the glare After the resist process, the residual de-strength photoresist liquid and the residual liquid after the deposition process, etc. After the previous process residue is cleaned, there may still be some organic residues introduced by the cleaning solution on the metal surface, which will affect the next process, or the corrosion of the metal surface will still exist, and the corrosion of the metal surface will affect the flatness and quality of the metal surfac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D7/26
Inventor 徐春宋伟红荆建芬顾元
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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