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Metal anti-corrosion protection solution used in semiconductor manufacturing process

A protective liquid and anti-corrosion technology, which is applied in the direction of organic non-surface-active cleaning compositions, etc., can solve the problems of narrow range of protection, adverse effects, and insufficient protection efficiency, so as to improve protection efficiency, reduce defects, and improve flatness quality Effect

Inactive Publication Date: 2011-12-07
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the protective solution in the above-mentioned patents either has insufficient protection efficiency in practical applications, or has defects such as residues that have adverse effects on subsequent processes; or the protection application range is narrow, so it is necessary to develop a new protection solution with high protection efficiency. , wide applicability of protective fluid

Method used

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  • Metal anti-corrosion protection solution used in semiconductor manufacturing process
  • Metal anti-corrosion protection solution used in semiconductor manufacturing process
  • Metal anti-corrosion protection solution used in semiconductor manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Containing 0.05% PAPEMP (polyaminopolyether group tetramethylene phosphonic acid) and polyacrylic acid (molecular weight 5000) 10ppm and water is the protective solution (pH=3.0) of remainder for the copper / Silica surface. (1) The process of polishing copper metal with chemical mechanical polishing liquid is: down pressure 1.0-2.0psi, polishing disc speed 50-70rpm, polishing head speed 70-90rpm, polishing liquid flow rate 200-300ml / min, polishing time 1-2min (2) Then under the pressure of 0.8-1.0psi, the rotating speed of the polishing disc 25rpm, the polishing head rotating speed 25rpm, use the traditional protection solution and the protection solution of the invention respectively, the flow rate of the protection solution is 150ml / min, and the flow rate of DI is 750ml / min. After mixing, flow into the polishing pad, and the polishing time is 30 minutes; (3) brush the surface of the wafer with a cleaning solution and a polyvinyl alcohol (PVA) roller brush for 2 minute...

Embodiment 2

[0039] A protective solution (pH=2.5) containing 0.25% PAPEMP and water as the balance was used on the copper / silicon dioxide surface polished by the chemical mechanical polishing solution. (1) The process of polishing copper metal with chemical mechanical polishing liquid is: down pressure 1.0-2.0psi, polishing disc speed 50-70rpm, polishing head speed 70-90rpm, polishing liquid flow rate 200-300ml / min, polishing time 1-2min (2) Then under the pressure of 0.8-1.0psi, the rotating speed of the polishing disc 25rpm, the polishing head rotating speed 25rpm, use the traditional protection solution and the protection solution of the invention respectively, the flow rate of the protection solution is 150ml / min, and the flow rate of DI is 750ml / min. After mixing, flow into the polishing pad, and the polishing time is 30 minutes; (3) brush the surface of the wafer with a cleaning solution and a polyvinyl alcohol (PVA) roller brush for 2 minutes, the rotation speed of the roller brush ...

Embodiment 3

[0042]A protective solution (pH=2.5) containing 0.2% methanesulfonic acid, polyacrylic acid (molecular weight 5000) 5000ppm and water as the balance was used on the aluminum / silicon dioxide surface polished by the chemical mechanical polishing solution. (1) The process of polishing copper metal with chemical mechanical polishing liquid is: down pressure 1.0-2.0psi, polishing disc speed 50-70rpm, polishing head speed 70-90rpm, polishing liquid flow rate 200-300ml / min, polishing time 1-2min (2) Then under the pressure of 0.8-1.0psi, the rotating speed of the polishing disc 25rpm, the polishing head rotating speed 25rpm, use the traditional protection solution and the protection solution of the invention respectively, the flow rate of the protection solution is 150ml / min, and the flow rate of DI is 750ml / min. After mixing, flow into the polishing pad, and the polishing time is 30 minutes; (3) brush the surface of the wafer with a cleaning solution and a polyvinyl alcohol (PVA) rol...

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Abstract

The invention relates to a protective solution for metal anticorrosion in semiconductor manufacturing process. It includes one or more organic acid chemical additives that can react with metal materials to form a protective film on the metal surface. The protective solution of the present invention can provide effective protection in the interval of wafer processing process or during transportation, greatly reduce the surface pitting corrosion of metal materials, reduce the degree of surface corrosion, and can provide effective protection even in the shutdown state. Thereby reducing defects, improving product yield and increasing yield.

Description

technical field [0001] The invention relates to a protective solution, in particular to a metal anticorrosion protective solution used in semiconductor manufacturing processes. Background technique [0002] Typical protection solutions include benzotriazole solution, deionized water, or leucine solution, which are mainly used to provide protection during the residence process between processes, such as chemical mechanical polishing, before entering the next cleaning process Before, or after etching to remove the strong photoresist process, before the next cleaning process and after the deposition process, etc. The residual liquid from the previous process has not been completely removed, and there may be some corrosion on the metal surface caused by the residual liquid from the previous process, which will intensify with time. Corrosion on the metal surface affects the flatness quality of the metal surface and keeps defect levels high, reducing product yield and yield. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D7/26
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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