Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing micron/submicron metal ring and open-mouth metal ring

A technology of metal rings and microspheres, applied in chemical instruments and methods, separation methods, microstructure technology, etc., can solve the problems of complex micromachining technology, high cost, and long time consumption of equipment, and achieve low equipment requirements and low cost , good effect of monodispersity

Inactive Publication Date: 2007-11-14
NANJING UNIV
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the methods for preparing micron / submicron metal rings and split rings mainly include photolithography, electron beam or ion beam etching, focused ion beam direct writing, microcontact printing, etc. Most of them require complex micromachining technology, which is time-consuming and costly. high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing micron/submicron metal ring and open-mouth metal ring
  • Method for preparing micron/submicron metal ring and open-mouth metal ring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1: The selected micron / submicron silica microspheres have a diameter of 1550nm (anywhere between 200nm and 10μm), the filled polymer is polystyrene (PS) (or other organic polymers), sputtered metal The material is gold. The preparation method of two-dimensional ordered micron / submicron gold ring is:

[0019] 1. Non-close-packed hemispherical SiO 2 Preparation of ordered arrays. Aligning SiO on silicon substrates by self-assembly technique 2 , to obtain a large-area highly ordered two-dimensional single-layer microsphere array; then after high-temperature annealing at 1250 ° C for 15 minutes, 40% HF solution steam corrosion for 1 to 3.5 minutes, to obtain non-close-packed SiO 2 Ordered array, see Figure 2(A); then perform a second annealing at 1300°C for 10 minutes to form a non-close-packed hemispherical SiO 2 Ordered array, see Figure 2(B), (the temperature of the high temperature annealing treatment is 1250-1300°C, and the annealing time is within the rang...

Embodiment 2

[0022] Example 2: Preparation of two-dimensional ordered micron / submicron gold split rings: the preparation process is basically the same as in Example 1, but after obtaining PS / SiO 2 After the ring-shaped porous template, it was immersed in alcohol solution, and then the template was slowly taken out by tilting. This process caused the PS porous membrane to move slightly until the boundary of the PS pores touched the SiO in the pores. 2 , thus obtaining the split ring PS / SiO 2 Porous template, see Fig. 2 (D); After sputtering gold on this template and removing template with the method for Example 1, promptly obtain the hexagonal non-close-packed two-dimensional ordered micron / submicron gold open ring array, open metal The outer boundary of the ring is circular, and the inner cavity is a U-shaped structure, as shown in FIG. 3(B). The adjustable range of its size parameters is the same as that in Embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparing method of the micro / sub-micron ferrule and the open ferrule. It gets the two-dimensional colloid crystal by the self-organizing technology, then to anneal in high temperature, chemical corruption, the secondary anneal in high temperature to form the non close-packed two-dimensional structure; the polymer is filled into lattice space to form the compound film which is put in the hydrofluoric acid steam to go on the secondary corrosion and form the ring space; the surface of the compound module is spurted by metal, then to resolve the compound module to get the ferrule array structure. If the sample is dipped into the alcohol solution to make the ring space change the partiality ring space; then to spurt by metal and remove the compound module to get the open ferrule. The advance of the invention is: the structural parameter can be controlled; the inner and outer diameter of the ferrule and the open ring can be adjusted and the circle can be controlled; the single disperse character is good and the thickness is uniform; the interface is clear and the technology is simple.

Description

technical field [0001] The invention relates to a preparation method of a two-dimensional ordered micron / submicron metal ring and an artificial magnetic metamaterial formed by a two-dimensional ordered array of the micron / submicron open metal ring. Background technique [0002] The preparation technology of two-dimensional ordered micro / submicron metal rings and split metal rings is a technology with important application background. Due to the tunable plasmon resonance of micron / submicron metal rings, the magnetic response of micron / submicron split metal rings and other novel electromagnetic properties, micron / submicron metal rings and split rings are widely used in optical devices, high-density storage, negative Areas such as refractive materials have potential applications. At present, the methods for preparing micron / submicron metal rings and split rings mainly include photolithography, electron beam or ion beam etching, focused ion beam direct writing, microcontact pri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B1/00
Inventor 孟涛祝名伟潘剑唐超军詹鹏王振林闵乃本
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com