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Method and device for preparing rare earth doped gallium nitride light-emitting film

A rare earth doping and luminescent thin film technology, which is applied in vacuum evaporation plating, metal material coating process, coating, etc., can solve the problems of expensive equipment and operation costs, unsuitable application fields, etc., and achieve no damage to the doping process, Strong adhesion and high growth rate

Inactive Publication Date: 2010-03-17
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MBE equipment and operating costs are very expensive
For thin-film crystal displays and solar cells, since glass substrates are generally used, the manufacturing process needs to be completed at a relatively low temperature, and the above two methods are not suitable for this application field

Method used

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  • Method and device for preparing rare earth doped gallium nitride light-emitting film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] There are 3 magnetron target pools in the vacuum chamber, and the metal gallium in the 2 target pools is doped with single rare earth powder (particle size 10 μm) of Tm and Er respectively. The doping ratio of Tm to the target is 1 at.%, and the doping ratio of Er to the target is 10 at.%. Another target pool is not doped with rare earth elements. Adjust the distance from the substrate holder to the target surface to be 11cm. Vacuum to 10 -4 Below Pa, after the vacuum degree is stable, pass a mixed gas of nitrogen and argon 1:99 (volume ratio) to make the working vacuum reach 4.0 Pa, and keep the vacuum degree at this time unchanged. Turn on the chiller to cool down the temperature of the target pool to below 10°C. Rotate the substrate to the top of the target pool not doped with rare earth elements, turn on the DC sputtering power supply of the target, without heating the substrate, deposit a layer of amorphous gallium nitride film at low temperature for 5 minutes. ...

Embodiment 2

[0023] There are 3 magnetron target pools in the vacuum chamber, and the metal gallium in one target pool is doped with Tm and Er rare earth nano-powders (particle size 100nm). The doping amount of Tm is 0.8 at.%, and the doping amount of Er is 1 at.%. The second target pool is doped with rare earth nanopowder (particle diameter: 80nm) with Eu element, and the mass content of the rare earth nanopowder of Eu element is 0.5 at.%. The third target pool is not doped with rare earth elements. Adjust the distance from the substrate holder to the target surface to 10cm. Vacuum down to below 10-4Pa until the vacuum is stable. Pass a mixed gas of nitrogen and argon 3:5 (volume ratio) to make the working vacuum reach 0.1 Pa, and keep the vacuum at this time constant. Turn on the chiller to cool down the temperature of the target pool to below 10°C. First rotate the substrate to the top of the target pool not doped with rare earth elements, turn on the DC sputtering power supply of t...

Embodiment 3

[0025] There are 3 magnetron target pools in the vacuum chamber. First, rare earth nano-powders (particle size: 50nm) of Tm and Er are doped in metal gallium in one target pool. The doping amount of Tm is 0.5at.%, and the doping amount of Er The amount is 2.0 at.%. The second target pool is doped with rare earth nanopowder technology (50nm in particle size) of Eu element and nanopowder technology (50nm in particle size) of Tm, and the mass content of the rare earth nanopowder of Eu element is 1.0at.%. The impurity amount is 1.0 at.%. The third target pool is not doped with rare earth elements. Adjust the distance from the substrate holder to the target surface to 8cm. Vacuum to 10 -4Below Pa, after the vacuum degree is stable. Nitrogen is passed to make the working vacuum reach 0.5 Pa, and the vacuum degree at this time remains unchanged. Turn on the chiller to cool down the temperature of the target pool to below 10°C. First rotate the substrate to the top of the target...

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Abstract

The invention discloses a preparing method of gallium nitride luminous film doped by rare earth, which is characterized by the following: controlling the substrate temperature within 0-500 Deg C; adopting nitrogen or composite gas of nitrogen and argon as splashing gas; proceeding magnetic control splashing for metal gallium of doped rare earth powder in the vacuum; sedimenting rare earth doped gallium nitride luminous film on the substrate of target position. The invention also provides magnetic control splashing device to prepare the product, which contains vacuum chamber; the rotary substrate rack with substrate and 3-5 magnetic targets are set in the vacuum chamber; the magnetic control target is set on the substrate, which makes substrate bottom parallel the magnetic control target; each magnetic control target connects DC anode directly; the cooling chamber is set in the magnetic control target, which possesses cooling dielectric inlet an outlet.

Description

technical field [0001] The invention relates to a method and a device for preparing a rare earth-doped gallium nitride light-emitting thin film. Background technique [0002] At present, domestic GaN:Re devices are generally epitaxially grown on sapphire or Si substrates at a high temperature of 800-1100°C by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The principle of metal-organic chemical vapor deposition (MOCVD) is: the organic metal compound of gallium reacts with nitrogen to form gallium nitride and organic matter, which is a balanced chemical reaction technology; this technology prepares rare earth doped gallium nitride (GaN: Re) Light-emitting devices usually need to inject rare earth elements into gallium nitride thin films by ion beam technology. Rare earth elements are heavy elements with large masses, and ion implantation will inevitably cause serious lattice damage. Molecular beam epitaxy (MBE) technology is to evaporate pur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/54
Inventor 付德君阴明利郭立平刘传胜
Owner WUHAN UNIV
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