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Pt/Ti metal membrane patterning technique

A technology of metal thin film and thin film graphics, which is applied in the fields of metal thin film patterning that is not easy to be etched, titanium metal thin film patterning, and platinum, and can solve problems such as low product qualification rate, graphic deformation, and product surface contamination.

Inactive Publication Date: 2009-12-02
KUNMING INST OF PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main technical problem to be solved by the present invention is to improve on the basis of the original technology and adopt a special developing method to fundamentally solve the pattern deformation of the product after patterning according to the defects in the patterning of the currently produced platinum-titanium metal film. , serious product surface pollution and low pass rate

Method used

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  • Pt/Ti metal membrane patterning technique
  • Pt/Ti metal membrane patterning technique
  • Pt/Ti metal membrane patterning technique

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Embodiment Construction

[0014] refer to Figure 6 , the concrete technological process of the present invention is: A, wash sheet, at first use detergent ultrasonic cleaning silicon chip 5 minutes, initially remove the organic dirt on silicon chip surface; Use acetone ultrasonic cleaning silicon chip 5 minutes again, clean silicon chip Impurities and dirt; Finally, soak in absolute ethanol for 3 minutes to completely remove the remaining impurities in the silicon wafer. B. Blow dry treatment, put the clean silicon wafer on the filter paper, and use nitrogen gas to dry the residual liquid on the surface of the silicon wafer through an air gun. C. Drying treatment, put the dried silicon wafer into a petri dish, put the petri dish into an oven, bake at 85°C for 5 minutes, and then take it out. D. Glue, refer to image 3 , Install the silicon wafer on the pallet of the homogenizer, and under the condition that the speed of the homogenizer is 4000 rpm, apply the photoresist 2 evenly on the silicon wafer...

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Abstract

The invention relates to a platinum titanium metal film imaging technique, belonging to the metal film photo-etching imaging technique, wherein it is characterized in that: after the photo-etching, arranging the exposure silicon plate in one chlorotoluene solvent, extracting after 30minis; drying and immerging it in developer solution for 2-3mins; and the photo resist will form reversed trapezium structure and angle. The invention can improve the image quality, with clear line, without surface pollution, while the product yield is improved from 40% to 85%.

Description

1. Technical field [0001] The invention relates to a photolithographic patterning process technology for metal thin films, which is mainly suitable for patterning platinum and titanium metal films, and also suitable for patterning metal films such as aluminum and gold that are not easy to be etched. 2. Background technology [0002] Usually, patterning is realized on metal thin films such as platinum, titanium, aluminum, gold, etc., mainly using wet etching or dry etching. Now take wet etching as an example, the main process flow: 1. Cleaning silicon wafers , 2. Growth of platinum-titanium metal film, 3. Coating photoresist, 4. Photolithography, 5. Development, 6. Preparation of etching solution, 7. Corrosion, 8. Cleaning, 9. Drying, etc. [0003] The platinum-titanium metal thin film patterned product produced by this method can basically meet the needs of use, and the cost is low. However, there are graphic distortions, unclear lines, and some open circuit phenomena, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F7/16G03F7/30G03F7/38
Inventor 信思树普朝光王忠华杨明珠杨培志
Owner KUNMING INST OF PHYSICS
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