A Method to Realize 50ω Impedance Matching of L-Band Devices

Abstract

The invention discloses an L wave band device 50 ohms impedance coupling method, and relates to the L wave band device coupling circuit technical field; the method comprises the following steps: using a ceramic substrate with the dielectric constant at 30-50 as the substrate material in the packaging housing of the L wave band device; using a T-type network to cancel the chip imaginary part impedance; improving the real part impedance up to 5-8 ohms; using a multi-branch impedance coupling network to couple to 50 ohms, thus realizing device impedance coupling. The method uses the ceramic substrate with high dielectric constant to prepare the multi-branch coupling circuit, uses impedance coupling to transform and lift the device input / output impedance up to 50 ohms, thus greatly reducing the coupling circuit size in the device.

Description

technical field [0001] The invention relates to the technical field of L-band device matching circuits, in particular to a method for realizing 50Ω impedance matching of L-band devices. Background technique [0002] At present, the conventional L-band device is a non-internal matching device, and the power die is directly packaged in the metal ceramic shell. When using it, an external matching circuit needs to be added to convert the input and output impedance of the device to 50Ω, and then it can be applied to solid-state power amplifiers, etc. In the 50Ω system of component products, the performance of the device mainly depends on the external matching circuit. At present, the successfully developed L-band devices cover two types of semiconductor materials, GaAs and GaN, and the operating frequency of the devices covers the typical application frequency band within the L-band 1.0GHz~2.0GHz. The output power range of GaAs devices is 8W~25W, and that of GaN devices The outp...

AI Technical Summary

Problems solved by technology

Due to the large wavelength of the L-band and the low output impedance of GaAs and GaN power devices with large gate widths, the size of the external matching circuit is relatively large when the L-band device is applied. Usually, part of the performance of the device is sacrificed in exchange for a reduction in the size of the external matching circuit. The method has great limitations, and cannot meet the requirements of high performance, miniaturization, and light weight for component products such as solid-state power amplifiers at the same time

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