ITO etching solution for TFT-LCD display screen and preparation method

Abstract

The invention relates to the technical field of wet electronic chemicals, and discloses an ITO etching solution for a TFT-LCD display screen. The ITO etching solution comprises the following components by weight: 10%-20% of sulfuric acid, 1%-5% of an additive, 0.05%-0.5% of a surfactant, 0.01%-0.1% of a defoaming agent, and the balance of water, wherein the additive is a mixture of inorganic salt and organic matter. The etching solution disclosed by the invention takes sulfuric acid as a main component, the production process is simple, and the acid concentration is easy to control and detect on line; the surfactant is added and has low surface tension, no cloud point and strong wetting power, the surface tension of the ITO etching solution is effectively reduced, and the rate in the etching process is moderate; the defoaming agent can eliminate foam generated by the surfactant in the etching process, meets the high-precision processing requirement of ITO film etching, has no destructive effect on photoresist, well protects etching lines, and enables the pattern to be complete; and meanwhile, the adopted inorganic salt can regulate and control the gradient of the ITO inclined surface after etching, so that the requirements of customers can be better met.

Description

technical field [0001] The invention relates to the technical field of wet electronic chemicals, in particular to an ITO etching solution for a TFT-LCD display screen and a preparation method. Background technique [0002] TFT-LCD has high resolution and good image display effect, its energy consumption is low, cost is getting lower and lower, and image effect is getting better and better, thanks to the continuous innovation of basic chemical materials and cost reduction. In the production of TFT-LCD, the TFT structure plays a very important role in the display as the switch of the electrode, and the etching of the ITO film is the last process in the fabrication of the TFT pattern Array. After the ITO film is sputtered, a layer of photoresist is covered, the pattern is exposed and developed, the ITO film is etched with an etchant, and the photoresist is peeled off to form the desired pattern. In addition, with the development of the display industry, the production line pro...

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Problems solved by technology

[0003] In the prior art, CN201210206045.5 discloses the aqua regia system of nitric acid / hydrochloric acid, CN201110132527.6 discloses the hydrochloric acid / acetic acid system, CN201911163144.8 discloses the ferric chloride / hydrochloric acid system, and CN201610860973.1 discloses the sulfuric acid / nitric acid system , the content of the acid used is high, the etching reaction is violent, and it is difficult to control the etching precision. It is not suitable for the ITO film layer with a small thickness, and the cost of the etching solution is high. During the process, it needs to be continuously replenished to ensure the stability of the component content

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