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Chemical reaction apparatus and power supply system

A technology of chemical reaction and power supply system, applied in chemical/physical/physicochemical fixed reactors, inorganic chemistry, electrochemical generators, etc., can solve the problems of increasing heat energy loss and deterioration of energy utilization, so as to improve energy utilization, Effect of suppressing heat loss and improving power generation efficiency

Inactive Publication Date: 2009-10-21
CASIO COMPUTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This increases thermal energy loss and worsens energy utilization

Method used

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  • Chemical reaction apparatus and power supply system
  • Chemical reaction apparatus and power supply system
  • Chemical reaction apparatus and power supply system

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0053] figure 1 It is a broken sectional view of the first embodiment of the chemical reaction device of the present invention. figure 2 It is a sectional view taken along the A-A line of the chemical reaction device.

[0054] The chemical reaction device 100 of the first embodiment of the present invention includes rectangular plate-shaped first and second substrates 11 and 17 stacked and bonded via a thin film heater 50 . The first substrate 11 is, for example, a silicon substrate, and the second substrate 17 is, for example, a glass substrate. For example, the length of the first substrate 11 is about 25 mm, the width is about 17 mm, and the thickness is about 0.6 to 1 mm. In addition, the thickness of the second substrate 17 is, for example, about 0.7 mm, and the length and width are the same as those of the first substrate.

[0055] In a plane of the first substrate 11, a zigzag-shaped reaction flow path 13 having a predetermined groove-like cross-section and having ...

no. 2 example

[0063] image 3 It is a broken sectional view of the second embodiment of the chemical reaction device 100 of the present invention. Figure 4 is a cross-sectional view taken along line A-A of the chemical reaction device 100.

[0064] The chemical reaction device 100 of the second embodiment has first and second substrates 11 and 12 adjacent to each other. The first and second substrates 11, 12 are rectangular plate-shaped substrates made of a semiconductor material such as silicon. For example, the first and second substrates 11 and 12 are bonded by an adhesive, but they may simply be in close contact with each other without any adhesive. The dimensions of the first and second substrates 11 and 12 are, for example, about 25 mm in length, about 17 mm in width, and about 0.6 to 1 mm in thickness.

[0065] Utilize the microtopography technology that develops in semiconductor manufacturing technology, on one surface or upper surface of first substrate 11 and on the other surf...

no. 3 example

[0085] Figure 8 is a sectional view showing an apparatus as a third embodiment of the chemical reaction apparatus of the present invention.

[0086] In the third embodiment, if the reactive fluid supplied to the first flow path 13 of the first substrate 11 contains a combustible component, the reactive fluid is supplied to the inlet 19 of the third substrate 17 . Further, as a combustion fluid, the reaction fluid and oxygen obtained from the atmosphere are supplied to the inlet 21 of the third substrate 18 .

[0087] For example, when the chemical reaction device 100 is applied to a conversion unit of a power supply system using a fuel unit described later, and is supplied as a reaction fluid by evaporating methanol aqueous solution (CH 3 OH+H 2 O) when the fuel gas for power generation is produced, the fuel gas for power generation contains combustible components (hydrogen), so the structure of the third embodiment is suitable for application. Therefore, power generation ...

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Abstract

PROBLEM TO BE SOLVED: To accurately control a heating temperature in a flow passage and to make a utilization efficiency of energy better by reducing a loss of thermal energy in a chemical reactor in which the thermal energy is fed to a reaction catalyst layer provided in a fine flow passage formed on one surface of a silicon substrate. SOLUTION: Both silicon substrates 11, 12 are adhered to each other. The reaction catalyst layer 15 is provided in the fine meandering flow passage 13 formed on one surface of a main silicon substrate 11 and the surface is covered with a main glass base plate 17. A burning catalyst layer 15 is provided in a fine meandering flow passage 14 formed on the other surface of a burning silicon substrate 12 is covered with a burning glass base plate 18. A thin film heater 23 is provided on an outer surface of a burning glass base plate 18. The burning gas fed into the flow passage 14 is burned on the burning catalyst layer 15 by a burning reaction and the inside of the flow passage 13 is heated by the thermal energy generated by this burning and the thermal energy caused by heat generation of the thin film heater 23. Diffusion of the thermal energy generated in the flow passage 14 by the burning reaction can be inhibited by the burning glass base plate 18 covering the flow passage 14. COPYRIGHT: (C)2004,JPO

Description

technical field [0001] The present invention relates to a chemical reaction device and a power supply system including the chemical reaction device; more particularly, to a chemical reaction device applied to a power supply system including a fuel unit that uses fuel to generate electricity. Background technique [0002] Chemical reaction devices are known in the field of chemical reaction technology, in which various fluidized material mixtures are supplied to the flow path, chemically react with a catalyst placed in the flow path, that is, the catalyst reacts, thereby generating the desired fluid material . [0003] Depending on their application, these chemical reaction devices come in a variety of sizes and configurations. For example, in some relatively small chemical reaction devices, a micro-scale or millimeter-scale flow path is formed in a silicon substrate using micro-configuration technology, which was developed in the manufacture of semiconductors such as semico...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J19/24H01M8/06B01J19/00F28F13/00F28F9/20F28D9/00C01B3/32C01B3/38
CPCY02E60/50
Inventor 河村义裕小椋直嗣五十岚哲
Owner CASIO COMPUTER CO LTD
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