Gallium arsenide PIN diode and preparation method thereof
A manufacturing method and diode technology, applied in the field of diodes, can solve problems such as bridge deck prone to collapse or fracture, increase process difficulty, reduce yield, etc., and achieve the effects of easy monolithic integration, simple process realization, and reduction of parasitic capacitance.
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[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0041] Such as figure 2 as shown, figure 2 Cross-sectional view of a GaAs PIN diode provided for the present invention. The cross-sectional view is a cross-sectional view perpendicular to the substrate along two ends of the GaAs PIN diode lower electrode semi-ring. The GaAs PIN diode consists of:
[0042] The semi-insulating GaAs substrate used to support the entire GaAs PIN diode;
[0043] Highly doped N epitaxially grown on semi-insulating GaAs substrates + layer, the highly doped N + A near-intrinsic high-resistance I layer and a P + layer; by wet etching, the highly doped N + layer, high resistance I layer and P + The area of the layer decreases successively to form a mesa structure;
[0044] at P + A ci...
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