Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device

Abstract

A method of manufacturing an active matrix substrate is provided that uses a technique of transferring a thin film device. In forming thin film transistors and pixel electrodes on an original substrate before transfer, an insulator film such as an interlayer insulation film or the like, is previously removed before the pixel electrodes are formed. Further, the original substrate is separated by exfoliation to transfer the device to a transfer material to cause the pixel electrodes to partially appear in the surface or the vicinity of the surface of the device. This portion permits application of a voltage to a liquid crystal through the pixel electrode.

Description

BACKGROUND OF THE INVENTION1. Field of the InventionThe present invention relates to a method of manufacturing an active matrix substrate using a method of transferring a thin film device. The present invention also relates to an active matrix substrate manufactured by the manufacturing method, and a liquid crystal display device comprising this active matrix substrate as one of a pair of substrates.2. Description of Related ArtFor example, a liquid crystal display using thin film transistors (TFT) is manufactured through the step of forming thin film transistors on a substrate by CVD or the like. Since the step of forming thin film transistors on the substrate is accompanied with high temperature processing, it is necessary to use material for the substrate which has excellent heat resistance, i.e., material having a high softening point and melting point. At present, silica glass is used as a substrate which can resist a temperature of about 10000C, and heat resistant glass is use...

AI Technical Summary

Benefits of technology

The present invention has been achieved in consideration of these problems, and an object of the invention is to provide a novel technique which permits independent free selection of a substrate used in producing thin film devices, and a substrate (a substrate having preferable properties for application of a product) used in, for example, actual use of a product, and a completely new method of effectively manufacturing an active matrix substrate having excellent properties and a liquid crystal display device by using the technique.

This invention is different from invention (1) in that the intermediate layer is provided. The intermediate layer can comprise a single layer film of an insulator, such as an SiO.sub.2 film or the like, or a multilayered film comprising a laminate of an insulator and a metal. The intermediate layer functions to facilitate separation from the separation layer, protect the transistors from contamination during removal of the separation layer, ensure insulation properties of the transistors, and suppress irradiation of the transistors with laser light.

However, in the present invention, a device is reversed by transfer, and thus the region where a voltage is applied to the liquid crystal layer from the pixel electrode is formed on the side (i.e., the thin film transistor side) opposite to a conventional device. Therefore, even if the color filter or the light shielding film has been previously formed on the original substrate before transfer, no trouble occurs. In this case, only common electrodes may be formed on the opposite substrate, and the color filter or the light shielding film, which is conventionally formed on the opposite substrate, need not be strictly aligned with the pixel electrodes, thereby facilitating assembly of a liquid crystal display device.

(13) This invention provides a liquid crystal display device comprising an active matrix substrate manufactured by the method of manufacturing an active matrix substrate of any one of inventions (1) to (11). For example, it is possible to realize an active matrix type liquid crystal display device comprising a plastic substrate and having flexibility.

Problems solved by technology

If the insulation film has a large thickness, a large voltage loss occurs in this portion, and thus a sufficient voltage cannot be applied to a liquid crystal.

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