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Magnetron sputter-pulsed laser deposition system and method

a laser deposition system and laser deposition technology, applied in vacuum evaporation coatings, electrolysis components, coatings, etc., can solve the problems of low deposition rate, inability to direct control the energy of sputtered atoms, and inability to achieve direct control of sputtered atom energy, etc., to achieve high deposition rate

Inactive Publication Date: 2001-01-02
THE UNITED STATES OF AMERICA AS REPRESETNED BY THE SEC OF THE AIR FORCE +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

In accordance with the foregoing principles and objects of the invention, system and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition ope...

Problems solved by technology

This technique provides rapid deposition rates of both metal and ceramic materials with large-area coating uniformity, but the required presence of sputtering or reactive gas limits attainable film composition, microstructure, uniformity, adhesion and purity.
Because direct control of the energy of sputtered atoms is not practical, electrical bias applied to the growing film is required for control of film microstructure.
Direct control of the kinetic energy of ablated species is obtained by varying laser power and focus parameters allowing control of film microstructure, but the method is limited by low deposition rates.

Method used

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  • Magnetron sputter-pulsed laser deposition system and method

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Embodiment Construction

Referring now to the accompanying drawing, shown therein is schematic diagram of the essential components of a system 10 representative of the invention and useful in the practice of the method thereof. An ultra-high vacuum chamber 11, grounded as at 12, was operatively connected to vacuum system 13 capable of evacuating chamber 11 to about 10.sup.-9 to 10.sup.-10 torr. Rotatable substrate table 15 was disposed within chamber 11 and driven by suitable motor means 16 operatively connected thereto. Gas inlet 18 defined in a wall of chamber 11 and communicating with source 19 of inert gas and with source 20 of reactive gas provided means for selective insertion of a controlled inert gas atmosphere and / or a reactive gas atmosphere in the operation of system 10 described below. Inert gases suitable for use in the practice of the invention include argon, krypton, xenon, or selected mixtures thereof, and reactive gases suitable for use include oxygen, nitrogen, acetylene, methane, hydrogen...

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Abstract

System and method for high vacuum sputtering combining magnetron sputtering and pulsed laser plasma deposition are described wherein simultaneous or sequential magnetron sputtering and pulsed laser deposition operations in a single ultra-high vacuum system provides high deposition rates with precise control of film morphology, stoichiometry, microstructure, composition gradient, and uniformity, in the deposition of high performance coatings of various metal, ceramic and diamond-like carbon materials.

Description

BACKGROUND OF THE INVENTIONThe present invention relates generally to systems and methods for high vacuum sputtering, and more particularly to a system and method combining magnetron sputtering with pulsed laser plasma sputtering which provides precise control of film composition, microstructure and uniformity.In magnetron sputtering, the film is grown by bombardment of a target of film material with ions of inert gas. The bombarding atoms are ionized and accelerated toward the target by intersecting magnetic and electric fields. A chemically reactive gas may be added to grow films of nitrides, carbides or oxides in conjunction with appropriate transition metal targets. This technique provides rapid deposition rates of both metal and ceramic materials with large-area coating uniformity, but the required presence of sputtering or reactive gas limits attainable film composition, microstructure, uniformity, adhesion and purity. Because direct control of the energy of sputtered atoms is...

Claims

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Application Information

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IPC IPC(8): C23C14/22C23C14/28C23C14/35
CPCC23C14/28C23C14/22
Inventor ZABINSKI, JEFFREY S.VOEVODIN, ANDREY A.DONLEY, MICHAEL S.
Owner THE UNITED STATES OF AMERICA AS REPRESETNED BY THE SEC OF THE AIR FORCE
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