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Planting process and manufacturing process for semiconductor device thereby, and plating apparatus

a manufacturing process and semiconductor technology, applied in the direction of electrical equipment, semiconductor devices, electrolysis components, etc., can solve the problems of difficult stable film formation, achieve the effects of preventing fluctuation in current density, improving the yield of plated films, and improving stability in the formation of metal films

Inactive Publication Date: 2006-10-26
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a method for plating a metal film on a wafer in a way that prevents defects, such as bubbling, caused by the insertion of the wafer into the plating solution. The invention achieves this by controlling the current density during the plating process based on the inclination angle of the wafer to the liquid surface. By controlling the current density, the invention prevents fluctuations in the current density and improves the stability of the plating process. The invention also provides a plating apparatus and a manufacturing process for semiconductor devices with metal films.

Problems solved by technology

However, after investigating the method described in Japanese Patent Application No. 2003-129297, the present inventors have found that stable film formation is difficult in spite of prevention of bubble adherence by inclined insertion of a wafer.

Method used

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  • Planting process and manufacturing process for semiconductor device thereby, and plating apparatus
  • Planting process and manufacturing process for semiconductor device thereby, and plating apparatus
  • Planting process and manufacturing process for semiconductor device thereby, and plating apparatus

Examples

Experimental program
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Effect test

embodiment 1

[0068]FIG. 1 is a cross-sectional view illustrating a configuration of a plating apparatus in this embodiment. The plating apparatus 110 shown in FIG. 1 has

[0069] a plating bath 101 to be filled with a plating solution 103,

[0070] a wafer moving unit (a driving unit, not shown) whereby a wafer 109 held by a cathode electrode 107 is immersed into the plating solution 103,

[0071] the cathode electrode 107 feeding a current to the wafer 109 when it comes into contact with the wafer 109,

[0072] an anode electrode (Cu anode electrode 105) disposed in the plating bath 101 such that it faces the cathode electrode 107,

[0073] a power source 115 for applying a current between the Cu anode electrode 105 and the cathode electrode 107, and

[0074] a controller 117 controlling a current intensity applied between the Cu anode electrode 105 and the cathode electrode 107 on the basis of an inclination angle of the film-formation surface from the liquid surface (FIG. 5). The cathode electrode 107 ac...

embodiment 2

[0109] This embodiment relates to another process for controlling a current applied between a cathode electrode and an anode electrode in electrolytic plating using the plating apparatus 110. In embodiment 1, a current intensity applied between a cathode electrode and an anode electrode is controlled in accordance with the above equation (1) in step 101 in forming a plating film. In this embodiment, the wafer 109 is immersed into the plating solution at a substantially constant speed while a current intensity applied between the electrodes is varied in proportion to an elapsed time t after the wafer 109 contacts with the plating solution 103 in step 101.

[0110] Specifically, in step 101 described above in embodiment 1, a current intensity I represented by the following equation (2) instead of equation (1) is applied.

I=I0t / t0  (2)

[0111] wherein I0 is an intensity of the second current and t0 is a time of completion of the first step.

[0112] More specifically, in this embodiment, θ ...

embodiment 3

[0116] This embodiment relates to another process for controlling a current applied between a cathode electrode and an anode electrode in electrolytic plating using the plating apparatus 110. Although there has been described immersion with a constant inclination angle θ of the wafer 109 from the plating solution 103 in embodiments 1 and 2 as examples, an inclination angle θ may be a time-dependent variable.

[0117]FIGS. 9, 10A, 10B, 11A, 11B and 12 illustrate a plating process using the plating apparatus 110. FIG. 9 is a plane view illustrating immersion of the wafer 109 into the plating solution 103. FIGS. 10A, 10B, 11A, 11B and 12 are cross-sectional views illustrating immersion of the wafer 109 into the plating solution 103. FIG. 13 shows relationship between an elapsed time after the wafer 109 contacts with the plating solution 103 and a current intensity I applied between the Cu anode electrode 105 and the cathode electrode 107 in the plating apparatus 110.

[0118] As shown in F...

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Abstract

An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step 101 of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and step 103 of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In step 101, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

Description

[0001] This application is based on Japanese patent application NO. 2005-125782, the content of which is incorporated hereinto by reference. BACKGROUND [0002] 1. Technical Field [0003] This invention relates to a plating process for forming a conducting film by electrolytic plating and a process for manufacturing a semiconductor device by the plating process, as well as a plating apparatus. [0004] 2. Related Art [0005] A damascene process is one of processes for forming a Cu multilayer interconnection in an LSI. In a damascene process, a monolayer or multilayer insulating film is formed on an Si wafer with a transistor, and the insulating film is selectively removed to form a trench of an interconnection pattern and a hole called as a via for electrical connection between multilayer interconnection layers. Next, a material containing a high-melting metal called as a barrier metal is deposited by chemical vapor deposition or physical vapor deposition. Then, a Cu film called as a seed...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C25D5/00
CPCC25D5/00C25D5/18H01L21/2885C25D17/001H01L21/76877C25D7/123H01L21/76849
Inventor FURUYA, AKIRATSUCHIYA, YASUAKI
Owner RENESAS ELECTRONICS CORP
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