Abrupt "delta-like" doping in Si and SiGe films by UHV-CVD

Abstract

A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms / cc, and a second epitaxial layer having a change in concentration in its first 40 OE from the first layer of greater than 1×1019 P atoms / cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

Description

RELATED APPLICATIONS [0001] This application is a divisional of U.S. application Ser. No. 10 / 735,167, filed Dec. 12, 2003, which is a divisional of U.S. application Ser. No. 08 / 885,611, filed Jun. 30, 1997.FIELD OF THE INVENTION [0002] This invention relates to semiconductor films with steep doping profiles and more particularly to forming abrupt “delta-like” doping in thin layers from 5-20 nm thick suitable for Si or SiGe CMOS, modulation-doped field-effect transistors (MODFET's) devices, and heterojunction bipolar transistors (HBT's) using in-situ doping in a ultra high vacuum-chemical vapor deposition (UHV-CVD) reactor. BACKGROUND OF THE INVENTION [0003] In-situ phosphorus doping in epitaxial Si and SiGe films or layers using PH3 has been known to demonstrate a very slow incorporation rate of P due to the “poisoning effect” of phosphine on the Si(100) surface. An example of such a doping behavior is shown in FIG. 1 by curve 11. Curve portion 13-14 of curve 11 shows the slow “tran...

AI Technical Summary

Benefits of technology

The present invention provides a structure and method for forming an abrupt doping profile in semiconductor materials such as silicon or silicon-based materials. The structure includes a substrate, a first epitaxial layer of silicon or silicon-based material doped with phosphorus or arsenic, and a second epitaxial layer of silicon or silicon-based material with a desired doping profile. The method involves selectively amorphizing the first layer and crystallizing it by solid phase regrowth. The invention also provides a field effect transistor with the abrupt doping profile and a method for forming raised source and drain regions. The technical effects of the invention include improved doping efficiency, reduced slow transient behavior, and better control over the doping profile.

Problems solved by technology

Another well known problem associated with in-situ phosphorus or boron doping in silicon CVD is its “memory effect” as shown by curve portion 15-16 in FIG. 1 for the case of phosphorus herein which tends to create an undesirable high level of dopant in the background due to its “autodoping behavior”.

Hence, in-situ doping typically generates a very undesirable “smearing out” of the dopant profile in silicon films formed by CVD.

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