Method and system for flowing a supercritical fluid in a high pressure processing system

Abstract

A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at a temperature approximately equal to and exceeding 80 degrees C., which is greater than the critical temperature of approximately 31 degrees C.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method and system for flowing a supercritical fluid in a high pressure processing system and, more particularly, to a method and system for providing a substantially uniform flow of supercritical fluid across a substrate in a supercritical processing system. [0003] 2. Description of Related Art [0004] During the fabrication of semiconductor devices for integrated circuits (ICs), a sequence of material processing steps, including both pattern etching and deposition processes, are performed, whereby material is removed from or added to a substrate surface, respectively. During, for instance, pattern etching, a pattern formed in a mask layer of radiation-sensitive material, such as photoresist, using for example photolithography, is transferred to an underlying thin material film using a combination of physical and chemical processes to facilitate the selective removal of the underlyi...

AI Technical Summary

Benefits of technology

[0009] One object of the invention is to provide a method and system for flowing a high pressure fluid in a high pressure processing system.

[0010] Another object of the invention is to provide a method and system of providing a substantially uniform flow of a high pressure fluid in a high pressure processing system.

[0011] According to one embodiment, a processing system for treating a substrate is provided comprising: a processing chamber configured to treat the substrate; a platen coupled to the processing chamber, and configured to support the substrate beneath a ceiling of the processing chamber; a fluid supply system coupled to the processing chamber, and configured to introduce a high pressure fluid to the processing chamber; a fluid flow system coupled to the fluid supply system, and configured to flow the high pressure fluid t

Problems solved by technology

Moreover, the advent of new materials, such as low dielectric constant (low-k) materials, limits the use of plasma ashing due to their susceptibility to damage during plasma exposure.

At present, the inventors have further recognized that conventional processing systems offer insufficient control of the flow, or velocity field, of the supercritical fluid over the substrate to be treated and, furthermore, such systems suffer from particulate contamination.

Images