Semi-insulating silicon carbide without vanadium domination

Abstract

A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 .OMEGA.-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

Description

[0001] This is a continuation-in-part of Ser. No. 09 / 757,950 filed Jan. 10, 2001, which is a continuation of Ser. No. 09 / 313,802 filed May 18, 1999, now U.S. Pat. No. 6,218,680. The present invention relates to the growth of high quality silicon carbide crystals for specific purposes, and in particular relates to the production of high quality semi-insulating silicon carbide substrates that are useful in microwave devices.BACKGROUND OF THE INVENTION[0003] The term "microwaves" refers to electromagnetic energy in frequencies covering the range of about 0.1 gigahertz (GHz) to 1,000 GHz with corresponding wavelengths from about 300 centimeters to about 0.3 millimeters. Although "microwaves" are perhaps most widely associated by the layperson with cooking devices, those persons familiar with electronic devices recognize that the microwave frequencies are used for a large variety of electronic purposes and in corresponding electronic devices, including various communication devices, and ...

AI Technical Summary

Benefits of technology

[0016] Therefore, it is an object of the present invention to provide a semi-insulating silicon carbide substrate without characterizing particular dopants as being universally "deep" or "shallow," and to provide a semi-insulating silicon carbide substrate that offers the capabilities that are required and advantageous for high frequency operation, but while avoiding the disadvantages of prior materials and techniques.

[0046] By avoiding the use of such elements, the invention likewise eliminates the need to compensate such elements with other elements and correspondingly reduces the complications that such compensation introduces into the crystal growth processes.

[0066] In such a preferred embodiment, the silicon carbide is grown under conditions that reduce the active nitrogen concentration to the point at which a relatively small amount of boron, preferably about 1E15 of boron, will make the crystal p-type. By controlling the growth conditions, the point defect concentrations can be brought to about 5E15 thus over-compensating the boron and producing the semi-insulating crystal. By reducing the concentration of nitrogen, and the corresponding compensating amounts of boron, the invention avoids the earlier-mentioned disadvantages of transition-metal domination and heavier degrees of doping and compensation. Because crystal growth of SiC is a relatively sophisticated process, exact parameters can differ depending on local or individual circumstances such as the particular temperatures used within the appropriate ranges and the characteristics of the equipment being used. Nevertheless, based on the disclosures herein, those of ordinary skill in this art can be expected to practice the invention successfully, and without undue experimentation.

Problems solved by technology

As recognized by those familiar with microwave devices, they often require high resistivity ("semi-insulating") substrates for coupling purposes because conductive substrates tend to cause significant problems at microwave frequencies.

As those familiar with silicon carbide are aware, however, silicon carbide grown by most techniques is generally too conductive for these purposes.

First, the presence of electronically significant amounts of any dopant, including vanadium, can negatively affect the crystalline quality of the resulting material.

As a second disadvantage, the introduction of compensating amounts of vanadium can reduce the yield and add expense to the production of semi-insulating silicon carbide substrates.

Third, the proactive compensation of silicon carbide, or any other semiconductor element, can be somewhat complex and unpredictable and thus introduces manufacturing complexity that can be desirably avoided if the compensation can be avoided.

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