Manufacturing engineering of contact hole in bipolar circuit of integrated circuit

A bipolar circuit and integrated circuit technology, applied in the direction of circuit, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of low etching efficiency of silicon dioxide layer 4, difficult to form shape effect, incompetent and expensive chip circuit processing, etc. problem, to achieve the effect of improving the contact hole morphology, saving resources, and speeding up the speed

Inactive Publication Date: 2007-04-25
BCD SEMICON MFG
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AI Technical Summary

Problems solved by technology

[0005] However, general dry etching equipment such as LAM490 has low etching efficiency for the dense silicon dioxide layer 4, and it is difficult to form a satisfactory shape effect.
Therefore, the existing process methods are not suitable for chip circuit processing with small contact hole size, and the advanced dry etching equipment that can achieve the desired effect is very expensive

Method used

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  • Manufacturing engineering of contact hole in bipolar circuit of integrated circuit
  • Manufacturing engineering of contact hole in bipolar circuit of integrated circuit
  • Manufacturing engineering of contact hole in bipolar circuit of integrated circuit

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Embodiment Construction

[0012] The invention provides a manufacturing process of a contact hole in an integrated circuit bipolar circuit, which can improve the shape of the contact hole without expensive advanced dry etching equipment. In the present invention, dry etching equipment is used to generate plasma before the contact hole is photolithographically coated. Since the dry etching equipment generates plasma to bombard the surface of silicon dioxide, the silicon dioxide becomes loose after the plasma bombardment, and in the next etching process, the rate will be accelerated, so it can be formed on the top of the contact hole. A good slope is formed, while the size of the contact hole remains unchanged; in addition, by adjusting the power of the plasma, the actual needs of different devices can be met, so that the shape of the contact hole can be adjusted. The details of the present invention will be disclosed in more detail below in conjunction with the accompanying drawings.

[0013] Please re...

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Abstract

The invention relates to a method for producing contact hole in dual-polar circuit of integrated circuit. Wherein, it comprises that (1), forming oxidize layer on the substrate with polar area; (2), light etching to form pattern; (3) etching at dry method and wet method to corrode to form contact hole; (4) depositing metal in the contact hole to form connecting line; between the steps (1) and (2), before light etching, using plasma to hit the surface of silica dioxide. The invention can avoid dry etching device, only process the oxidize layer with plasma, to improve the shape of contact hole, to reduce cost and save resource.

Description

Technical field [0001] The invention relates to the technical field of integrated circuit technology, in particular to a manufacturing technology of a contact hole in a bipolar circuit. Background technique [0002] In the process of bipolar circuits, when the size of the contact hole is larger than 3 microns, wet etching is usually used to form the contact hole, and when the size of the contact hole is smaller than 1 micron, it is necessary to use advanced dry etching equipment to solve the contact hole morphology technical bottleneck. When the size of the contact hole is between 1.5 microns and 2 microns, dry etching and wet etching need to be used in combination. It can be dry etched first and then wet etched; it can also be wet etched first and then dry etched. . [0003] The existing process steps are generally: oxidize the substrate material, apply glue on the surface of the substrate after oxidation, expose and develop the contact hole; after the photolithography pr...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L21/3105H01L21/8222
Inventor 童亮邱斌刘先锋黄平
Owner BCD SEMICON MFG
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