Method of manufacturing dielectric layer of grid

Abstract

The method includes steps: first, the provided substrate can at least be divided into region of high voltage circuit and region of low voltage circuit; next, forming first dielectric layer on substrate, and the first dielectric layer is in use for grid dielectric layer in region of high voltage circuit; then, forming mask layer on the first dielectric layer, patterning the mask layer, the first dielectric layer, and the substrate in order to form groove in the substrate; forming insulating layer on the substrate to fill in the groove; removing the mask layer, and partial insulating layer to expose surface of the first dielectric layer; removing the first dielectric layer in region of low voltage circuit to expose surface of the substrate; forming second dielectric layer in substrate of the region of low voltage circuit' the thickness of the second dielectric layer is smaller than the first dielectric layer.

Description

Technical field [0001] The present invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a gate dielectric layer. Background technique [0002] With the rapid development of the field of integrated circuits, high-efficiency, high-integration, low-cost, thin and short have become the goals pursued in the design and manufacture of electronic products. For the current semiconductor industry, in order to meet the above goals, it is often necessary to manufacture multiple functional components on the same chip. [0003] Integrating high-voltage components and low-voltage components on the same chip is a way to meet the above requirements. For example, low-voltage components are used to manufacture control circuits, and high-voltage components are used to manufacture Electrically Programmable Read-Only Memory (EPROM), Flash Memory, or liquid crystal display drive circuits. [0004] However, in order to be able to withstand ...

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Problems solved by technology

The neck junction effect will reduce the quality of the components, reduce the stability and reliability of the components, and lead to a decrease in the yield of the process

However, in the low-voltage circuit area 102, due to the presence of the recess 168, doped polysilicon will fill the region of the recess 168, and problems such as junction leakage will occur, which not only increases power consumption, but also lengthens the life of the device. calculating speed

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