Method for reducing electric leakage of transistor in active zone edge junction

Abstract

The invention discloses a method for reducing junction leakage on the edge of the active region of a transistor, comprising the steps of: developing to eliminate photoetching glue on the edge of the active region by photoetching after routine source / drain injection, and making a supplemental ion injection on the exposed edge of the active region to deepen the junction on the edge of the active region so as to effectively prevent the junction leakage.

Description

technical field [0001] The invention relates to a shallow trench isolation process method, in particular to a method for reducing transistor leakage at the edge junction of an active region during source and drain injection in the shallow trench isolation process. Background technique [0002] The static power consumption of the circuit is mainly composed of the subthreshold current of the transistor and the junction leakage. With the continuous development of integrated circuits, the integration of circuits is getting higher and higher, and more and more transistors are integrated in a single circuit. To reduce the static power consumption of the circuit, the subthreshold current and junction leakage of a single transistor must be reduced. [0003] For the integrated circuit manufacturing process using shallow trench isolation, during source and drain implantation, the photoresist layer on the surface of the active region to be implanted is removed through a photolithograph...

AI Technical Summary

Problems solved by technology

Since the cross-section of the shallow trench region is an inverted trapezoid, the field oxygen at the edge of the shallow trench will block the impurity implantation, resulting in a shallower PN junction at the edge of the active region, resulting in a larger junction leakage.

figure 1 It is a junction formed after conventional source-drain implantation. It can be seen that near the edges of both sides of the active region, because the field oxygen at the edge of the shallow groove blocks the impurity implantation, the formed junction is relatively shallow, and junction leakage is more likely to occur.

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