Dedicated blade materials for line cutting of semiconductor materials

Abstract

The invention discloses a specific cutting knife-material of semiconductor material wire (6H-SiC), which comprises the following steps: 1. grinding through cyclone; grading flow; 2. grading water pretreatment; grading finely for overflow; 3. wetting to blend; dehydrating eccentrically; separating; 5. drying through microwave continuously; 6. blending dryly. The invention is compatible with flexibility of black carbofrax, which improves anti-grinding property obviously.

Description

technical field [0001] The invention relates to a blade material, in particular to a special blade material for wire cutting of semiconductor materials. Background technique [0002] Due to its high hardness and certain toughness, silicon carbide powder is not only used in various traditional grinding tools and processing methods, but also in multi-wire cutting and grinding in electronic engineering such as single crystal silicon, polycrystalline silicon, and piezoelectric crystals. It has also been widely used. However, due to the fact that the raw materials for the production of traditional silicon carbide micropowder are ordinary abrasive silicon carbide blocks, and the production methods adopt traditional technologies and processes such as ball milling, chemical treatment, overflow, natural sedimentation dehydration, coal-fired or gas-fired drying, and produce per ton of micropowder products It needs 70-80 tons of water, uses 200kg of industrial sulfuric acid, and has a...

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Problems solved by technology

However, due to the fact that the raw materials for the production of traditional silicon carbide micropowder are ordinary abrasive silicon carbide blocks, and the production methods adopt traditional technologies and processes such as ball milling, chemical treatment, overflow, natural sedimentation dehydration, coal-fired or gas-fired drying, and produce per ton of micropowder products It needs 70-80 tons of water, uses 200kg of industrial sulfuric acid, and has a long production cycle. It is a production method with high energy consumption, high pollution, and low efficiency. There are also unsatisfactory aspects in the cutting of monocrystalline silicon wafers for integrated circuits and solar single and polycrystalline silicon wafers.

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