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Process for preparing magnetic Czochralski silicon monocrystal

A magnetic field Czochralski, silicon single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of vortex defect oxygen content, uneven radial distribution of resistivity, etc.

Inactive Publication Date: 2006-04-26
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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Problems solved by technology

[0003] In view of the above-mentioned technical status, the object of the present invention is to provide a method for preparing a magnetic field Czochralski silicon single crystal in order to solve the technical problems of uneven radial distribution of resistivity, easy generation of eddy defects and high oxygen content in silicon single crystals.

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  • Process for preparing magnetic Czochralski silicon monocrystal
  • Process for preparing magnetic Czochralski silicon monocrystal

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Embodiment Construction

[0007] refer to figure 1 , MCZ (magnetic field Czochralski method) silicon single crystal process is: polycrystalline incoming inspection → polycrystalline crushing → corrosion → cleaning → drying → packaging → cleaning furnace → charging → vacuuming, filling with argon → heating Material → turn on the electromagnetic field → seeding, neck thinning → shoulder release → shoulder collection → equal diameter → finishing → lifting to cool down → release from the furnace → inspection → ingot cutting → storage. The above-mentioned technical solution disclosed by the present invention is the opening of the electromagnetic field and the narrowing process in the process flow, and other processes are the same as the ordinary Czochralski method, and will not be described here.

[0008] Analysis of oxygen content of MCZ silicon single crystal: The oxygen content of MCZ silicon single crystal and CZ (common Czochralski method) silicon single crystal has obvious changes, and the oxygen cont...

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Abstract

The present invention relates to monocrystal silicon, and is especially the preparation process of monocrystal silicon drawn via Czochralski method in magnetic field for semiconductor devices. The preparation process includes the following steps: smelting polycrystalline material; applying magnetic field and increasing current gradually to 35 A; rotating crucible in 1-8 rpm and rotating seed crystal at 12-16 rpm after the magnet field reaches 1200 GS and regulating crucible position; and drawing neck via regulating seed crystal stroke to zero, rotating crystal raise potentiometer and raising drawing speed to 16 inch / hr. The monocrystal silicon thus prepared has homogeneous radial distribution of resistivity and high quality.

Description

technical field [0001] The invention relates to a method for preparing a silicon single crystal, in particular to a method for preparing a magnetic field Czochralski silicon single crystal for semiconductor devices. technical background [0002] At present, during the drawing process of the silicon single crystal prepared by the ordinary Czochralski process, the silicon and phosphorus atoms in the molten state are in the ion state, and the silicon liquid in the quartz crucible has thermal convection due to thermal movement, which promotes the decomposition of phosphorus. Condensation and volatilization are not conducive to the control of crystal radial resistivity unevenness. Therefore, silicon single crystals prepared by ordinary Czochralski technology generally have technical problems such as uneven radial resistivity distribution, vortex defects and high oxygen content. . The radial resistivity non-uniformity requirement of Czochralski silicon single crystal is getting h...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 沈浩平胡元庆汪雨田刘为钢李翔刘宇李海静周建华
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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