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Great diameter SiC monocrystal cutting method

A cutting method and large-diameter technology, which is applied in metal processing and other directions, can solve the problems of not being suitable for cutting SiC single crystals, etc., and achieve the effects of small warpage, shallow knife marks, and small damage

Active Publication Date: 2006-03-01
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SiC is a semiconductor material with high hardness, and conventional cutting wires are not suitable for cutting SiC single crystals.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for cutting large-diameter SiC single crystals, using the RTS440 wire cutting machine produced in the United States, using a diamond cutting wire with a diameter of 250 μm, and its slit width is 275 μm. inch, SiC single crystal rod with a thickness of 15mm.

[0025] The specific cutting steps are as follows:

[0026] (1) Adjust the level: first adjust the cutting machine to be in a horizontal state before operation;

[0027] (2) Winding: Put the diamond cutting wire on the winding wheel, then go around the tensioning wheel and the guide wheel, so that the diamond wire passing through the winding wheel, tensioning wheel, and guiding wheel is on the same plane, and make the wire Uniform distribution of upper tension;

[0028] (3) Install the SiC crystal to be cut: bond the SiC single crystal rod to be cut on the special base, adjust the cutting direction and range, and fix the base on the workpiece table;

[0029] (4) Determine parameters: determine wafer thic...

Embodiment 2

[0034] The cutting method, specific cutting steps and average slicing speed are the same as in Example 1. A diamond wire with a wire diameter of 450 μm is used to cut a SiC single crystal rod with a thickness of 15 mm. The slit width is 475 μm, and 12 SiC wafers with a thickness of 0.7 mm can be cut. , the warpage of each piece is less than 30μm, and the thickness unevenness TTV is less than 25μm.

Embodiment 3

[0036] The cutting method, specific cutting steps and average slicing speed are the same as in Example 1. A diamond wire with a wire diameter of 150 μm is used to cut a SiC single crystal rod with a thickness of 15 mm. The slit width is 175 μm, and 17 SiC wafers with a thickness of 0.7 mm can be cut. , the warpage of each piece is less than 30μm, and the thickness unevenness TTV is less than 25μm.

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Abstract

The great diameter SiC monocrystal cutting method belongs to crystal material processing technology. SiC monocrystal is cut by means of diamond wire cutting machine with cutting wire of 150-450 micron diameter and coated with diamond grains. The diamond wire cutting wire in high speed reciprocation cuts great diameter SiC monocrystal. The present invention has the following advantages: capacity of cutting SiC monocrystal of size ove 2 in, less cutting loss, shallow cutting trace, less damage to cut chip, capacity of cutting chip with thickness as small as 200 micron, saving in cost, homogeneous thickness and less deformation of the cut chip, and simple cutting process.

Description

1. Technical field [0001] The invention relates to a method for cutting a large-size silicon carbide (SiC) single crystal, belonging to the technical field of crystal material processing. 2. Background technology [0002] SiC is an important third-generation semiconductor material developed after silicon (Si) and gallium arsenide (GaAs). It has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, and high carrier saturation migration velocity. , has great application potential in high temperature, high frequency, high power, microelectronic devices, etc. [0003] After growing a high-quality large-diameter SiC single crystal, the ingot should be cut into wafers, and processed by grinding and polishing to prepare a surface-free, non-damaged, ultra-smooth substrate with a thickness of 0.2-0.3mm, and then High-performance semiconductor devices are prepared through epitaxial growth or other semiconductor device processes. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B26D1/46
Inventor 徐现刚胡小波陈秀芳李娟蒋民华
Owner SICC CO LTD
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