Self-assembly method for developing film of zinc oxide through induction of seed crystal and liquid phase epitaxy in low temperature

Abstract

A process for growing zinc oxide film by seed crystal inducing and low-temp liquid-phase epitaxial self-assembly includes mixing zinc acetate with sodium bicarbonate, grinding, reacting at 160 deg.C for 2-4 hrs, washing with deionized water, baking at 100 deg.C to obtain substrate, spinning-coating the alcohol solution of non-crystal ZnO on the substrate, reaction at 180-200 deg.C for 2-4 hrs to generate crystal seeds with same orientation, immersing it in organics solution of zinc acetate, and growing at 80-100 deg.C for 15-20 hrs.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and relates to the preparation of oxide semiconductor thin films, in particular to a method for seed crystal induction and low-temperature liquid phase epitaxy self-assembly growth of zinc oxide thin films. Background technique [0002] ZnO is a direct wide bandgap II-VI semiconductor material with an energy band width of 3.37eV and a room temperature exciton binding energy as high as 60meV. It can theoretically be used to obtain high-efficiency ultraviolet (UV) luminescence. ZnO and GaN have similar lattice structures and band gaps, but ZnO raw materials are cheap and easy to obtain, and have a higher melting point than GaN, with a melting point of 1975°C. The exciton binding energy of ZnO at room temperature is 60meV. Since the exciton binding energy at room temperature is much higher than the thermal ionization energy of 25meV at room temperature, and is also much higher than t...

AI Technical Summary

Problems solved by technology

All of the above methods require expensive equipment and high operating costs, and must complete material growth at a high temperature above 500 °C

Growth of ZnO crystal film at high temperature is prone to thermal defects. In addition, ZnO crystal film and Al 2 o 3 The difference in lattice constant and thermal expansion coefficient of the substrate is also very prone to thermal defects, so it is difficult to prepare high-quality ZnO thin films

Although scientists at home and abroad have made great progress in this area, there is still a long way to go before ZnO thin film materials that meet the quality requirements of devices.