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Dipped barium tungsten cathode based on nanometer material silicn dioxide and reparation method

A technology of nano-silica and silicon dioxide, which is applied in the field of impregnated barium tungsten cathodes and the preparation of the above-mentioned impregnated barium tungsten cathodes, can solve the problems of complicated process, insufficient life, and insufficient emission current of impregnated barium tungsten cathodes, and achieve technological Good repeatability and stability, short production cycle, and convenient electron emission

Inactive Publication Date: 2004-10-20
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, it has defects such as complicated process, high difficulty, poor repeatability and stability, and high cost. In addition, with the increasing requirements of high-power electronic tubes, the original traditional impregnated barium-tungsten cathode has insufficient emission current and long life. The disadvantages of high temperature and insufficient work stability are increasingly unable to keep up with the development of the situation

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  • Dipped barium tungsten cathode based on nanometer material silicn dioxide and reparation method
  • Dipped barium tungsten cathode based on nanometer material silicn dioxide and reparation method

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Embodiment Construction

[0020] The composition of the impregnated barium tungsten cathode provided by the invention is 1-20% by weight of nano-silicon dioxide and 80-99% of tungsten powder, and the pores are impregnated with aluminate.

[0021] The method for preparing the above-mentioned impregnated barium tungsten cathode provided by the present invention is:

[0022] 1) Micro-particles, high-purity tungsten powder and nano-silica are used, and the tungsten powder and nano-silica are respectively placed in a 900°C hydrogen furnace for annealing to thoroughly purify and enhance their plasticity.

[0023] 2) Take 5% nano silicon dioxide and 95% tungsten powder by weight, mix and grind the two materials to ensure uniformity. The mixture was pressed into a flat-topped cathode body using a die containing a cylinder of molybdenum. The flat top cathode body has a diameter of 2-5mm and a thickness of 1-4mm. The flat top cathode body prepared in this example has a diameter of 3.6 mm and a thickness of 2 m...

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Abstract

Cathode is composed of 10-20% wt nano-silicon dioxide and 80-99% wt tungsten powder, and dipping aluminate is in small opening. Preparation method is as following: annealing is carried out for nano-silicon dioxide and tungsten powder in hydrogen furnace under 500-1500deg.C; mixing nano-silicon dioxide and tungsten powder and grinding the mixture evenly; pressing the mixture by stamper with molybdenum tube being inside so as to prepare flat-headed cathode; putting cathode in hydrogen furnace for heat preservation 1-10 hours under 1000-1500 deg.C; putting cathode in aluminate powder, at hydrogen atmosphere, 1500-2000 deg.C for 1-10 minutes and cleaning out float salt; installing heater obtains cathode needed.

Description

technical field [0001] The invention relates to a barium tungsten cathode on an electron tube device, in particular to an impregnated barium tungsten cathode based on nanometer material silicon dioxide. [0002] The present invention also relates to a method for preparing the impregnated barium tungsten cathode. Background technique [0003] The traditional impregnated barium tungsten cathode has the characteristics of low surface work function, large emission current, long life, good working stability, strong resistance to poisoning and ion bombardment, so it is widely used as an electron source in various fields. High-power electronic tube devices, such as klystrons, magnetrons, traveling wave tubes, and high-definition and high-brightness picture tubes. However, it has defects such as complicated process, high difficulty, poor repeatability and stability, and high cost. In addition, with the increasing requirements of high-power electronic tubes, the original traditional...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/14H01J9/02
Inventor 张红卫
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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