Method of disposing ion with high doping concentration for lowering defect on substrate

Abstract

A program of disposing ion with high doping concentration (1E14-1E16atom / cm2) is carried out for a substrate. The said program includes a low current of ion beam in range 1-7mA. In the invented method, using low current of ion beam lowers defect on substrate generated by the program of disposing ion.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit (integrated circuit; IC), in particular to an ion implantation method with high doping concentration for reducing substrate defects. Background technique [0002] In the use of Complementary Metal-Oxide Semiconductor (CMOS) devices, there is a shortcoming of the so-called latch-up phenomenon, and many methods to solve the latch-up phenomenon have been proposed at present. For example, in R.Troutman, "Latch-Up in CMOS Technology: The Problem and Its Cure." Kluwer Academic, Norwell, Mass. (1986) document, it is proposed to carry out high doping concentration (1E14--1E16 atom / cm 2 ) ion implantation method to reduce the lock-up phenomenon; however, although the ion implantation method with high doping concentration can achieve the purpose of reducing the lock-up phenomenon, the ion implantation manufacturing method with high doping concentration will cause substrate d...

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Problems solved by technology

For example, in R.Troutman, "Latch-Up in CMOS Technology: The Problem and Its Cure." Kluwer Academic, Norwell, Mass. (1986) document, it is proposed to carry out high doping concentration (1E14--1E16 atom / cm 2 ) ion implantation method to reduce the lock-up phenomenon; however, although the ion implantation method with high doping concentration can achieve the purpose of reducing the lock-up phenomenon, the ion implantation manufacturing method with high doping concentration will cause substrate defects, For example, dislocation defect, etc.

[0003] In addition, it was also proposed to use trench isolation (Trench Isolation) to solve the latch-up phenomenon, as described in US Patent No. 5,937,288, but when trenching, it will also cause substrate defects

[0004] In addition, regarding the manufacturing method of the source and drain of Metal-Oxide-Semiconductor (MOS) components, it is usually formed by ion implantation with high doping concentration, so there will also be the above-mentioned base defects. The problem occurs, which seriously affects the reliability of the product (reliability)

[0005] In addition, although traditional high temperature (>1000°C) or rapid temperature rise and fall (temperature rise and fall rate>50°C / sec) thermal manufacturing methods can be used to eliminate substrate defects and achieve thermal activation (thermal activation), however, the high temperature The manufacturing method can affect the performance of other components, and the rapid heating and cooling manufacturing method is usually an additional manufacturing method, which increases the manufacturing cost

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