A Trench Type Insulated Gate Field Effect Transistor

Abstract

The invention discloses a groove type insulated gate field effect tube. The groove type insulated gate field effect tube comprises an N-type epitaxial layer. A P-type injection layer is formed below the N-type epitaxial layer, a groove is formed in the upper portion of the N-type epitaxial layer, a gate oxide layer and a polysilicon gate are formed in the groove, a P-type trap and an N-type active area are formed on two sides of the groove, and the N-type active area is placed above the P-type trap. A circular hollowed-out structure is formed in the N-type active area, interlayer oxidation media are formed above the groove, the circular hollowed-out structure and the N-type active area, a P-type injection area is arranged below a contact hole, and the contact hole penetrates through the interlayer oxidation media and connects the N-type active area and the P-type injection area. The groove type insulated gate field effect tube reduces spurious base resistance (RB) of an NPN and reduces the area of an NPN emitter of a spurious thyristor at the same time, and therefore happening rates of latch-up effects of the spurious thyristor are reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a trench-type insulating gate field effect transistor. Background technique [0002] A traditional trench type insulated gate field effect transistor (IGBT) structure (such as figure 1 , figure 2 As shown), the N-type active region usually adopts a long strip shape, the contact hole is located above the P-type active region and the N-type active region, and the N-type active region and the P-type active region have an overlapping area under the contact hole. In the traditional structure, since the overlap of the P-type active region and the N-type active region increases the emitter area of ​​the parasitic thyristor, the β of the parasitic thyristor becomes larger, thereby increasing the probability of the latch-up effect. The consequence of the latch-up is that the IGBT loses its gate control ability, the device cannot be turned off by itself, and even the large cur...

AI Technical Summary

Problems solved by technology

In the traditional structure, since the overlap of the P-type active region and the N-type active region increases the emitter area of ​​the parasitic thyristor, the β of the parasitic thyristor becomes larger, thereby increasing the probability of the latch-up effect

The consequence of latch-up is that the IGBT loses its gate control ability, the device cannot be turned off by itself, and even the large current formed by the positive feedback will permanently burn the IGBT

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