Orgnic electroluminescence device and its preparation method

Abstract

The invention belongs to the technique area of the semiconductor elements and devices. Three layers of the isolation pole are prepared on the graphics of the first electrode. The graphics of the first layer of the isolation pole is the mesh texture with the cross section being as trapezoid shape. The cross section of the lines on the second layer and the third layer of the isolation pole possess the shape with big at the upper and small at the lower. Then, the organic function layer and the second electrode are deposited in sequence. The shadow effect caused by the shape with big at the upper of the second layer and the third layer makes the second electrode possible to be partitioned. The first layer of the isolation pole being equivalent to 'insulating base' prevents the short circuit between the electrodes.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method of the device, belonging to the technical field of electronic semiconductor components. Background technique [0002] Organic Electroluminescent Devices (Organic Electroluminescent Devices, hereinafter referred to as OLEDs) are generally composed of a transparent first electrode located on a transparent substrate, an organic electroluminescent medium (organic functional layer) deposited on the first electrode, and an organic electroluminescent medium (organic functional layer) located on the transparent substrate. The second electrode (metal electrode) above the organic electroluminescence medium. The transparent electrode serves as the anode of the device, and the metal electrode serves as the cathode of the device. Apply a high level to the transparent electrode and a low level to the metal electrode to make the device emit light. A group of anodes (or cathodes)...

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Problems solved by technology

[0004] ① The baking temperature (120°C) of photoresist will damage the organic film;

[0005] ② Solvents, developers, and corrosive solutions of photoresist will damage the organic film;

[0010] (1) The isolation column is composed of three layers of inorganic films (silicon nitride 3-silicon dioxide 4-silicon nitride 5), and the PECVD method is required to deposit the film. The PECVD equipment is expensive, the film formation process is complicated, and the process conditions are not easy to control. As a result, in large-scale production, the yield is low, the cost is high, and the investment in equipment is huge, so it is difficult to accept the construction of domestic production lines;

[0011] (2) Silane, nitrogen and oxygen need to be introduced into the reaction furnace of PECVD equipment to form silicon nitride and silicon dioxide through chemical reactions. Silane is poisonous and will adversely affect the health of the staff. The reaction furnace of the equipment and The gas pipeline needs to be well sealed, and the gas discharge should pay attention to environmental protection, which will increase the production cost;

[0012] (3) The shape of the isolation column is realized by one exposure, one wet etching of silicon dioxide 4 and two dry etching of silicon nitride 3 and 5. The pattern preparation process is complicated, and the process conditions are not easy to control, resulting in the yield rate in mass production Low, high cost;

[0013] (4) The cross-sectional shape of the bottom silicon nitride 3 insulating layer is rectangular, and the edge is steep, and there will be an obvious edge effect when evaporating the organic functional layer 6 and the second electrode (metal layer) 7, so that the luminous point is evaporated Inhomogeneity, thereby affecting the luminous uniformity and life of the device, and part of the metal layer 7 may fall over the organic functional layer 6 and fall into the transparent conductive film (first electrode) 2 between the bottom silicon nitride 3 and the organic functional layer 6 on, causing the pixel to be short-circuited and not emitting light;

[0014] (5) The insulating layer of the underlying silicon nitride 3 is only distributed parallel to the direction perpendicular to the transparent conductive film layer (first electrode) 2, which reduces the reflection between the metal lines while separating the metal layer (second electrode) 7. To suppress the voltage, but can not reduce the reverse suppression voltage between the first transparent electrodes, so that the power consumption of the device is relatively high;

[0015] (6) Doping black dye in the spacer material can improve the contrast when the device emits light, because the bottom silicon nitride 3 can only be distributed parallel to the direction perpendicular to the transparent conductive film layer (first electrode) 2, and cannot The direction parallel to the transparent conductive film layer 2 is distributed in parallel, so the contrast of the device cannot be significantly improved

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