Perovskite light absorption layer and preparation method thereof, and solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of poor reproducibility of the solution method, and the quality, consistency and work stability of the gas phase method need to be improved. The effect of quality and working stability, suppression of non-radiative recombination at the interface, and simple operation

Pending Publication Date: 2022-07-22
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Abstract
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Problems solved by technology

[0005] Based on this, an object of the present application is to provide a perovskite light-absorbing layer to solve the poor reproducibility of the solution method in the prior art, and the technology that the device quality, consistency and work stability of the gas phase method need to be improved question

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  • Perovskite light absorption layer and preparation method thereof, and solar cell and preparation method thereof
  • Perovskite light absorption layer and preparation method thereof, and solar cell and preparation method thereof
  • Perovskite light absorption layer and preparation method thereof, and solar cell and preparation method thereof

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preparation example Construction

[0049] The embodiments of the present application also provide a method for preparing a perovskite light-absorbing layer, comprising the following steps:

[0050] S100: attaching the perovskite to the surface of the first functional layer to form a perovskite matrix on the surface of the first functional layer.

[0051] The first functional layer may be a hole transport layer or an electron transport layer or other functional layers, and forms a functional connection with the first functional layer.

[0052] S200: The perovskite matrix is ​​deposited, doped and repaired with amine salt vapor to obtain a perovskite light absorbing layer.

[0053] Optionally, the reaction temperature of the deposition doping and repairing treatment is 100°C-160°C, which can keep the amine salt in a vapor state, so that the amine salt can continuously react with the perovskite matrix.

[0054] The reaction time can be adjusted according to actual needs, such as the degree of reaction, reaction r...

Embodiment 1

[0080] The preparation method of the solar cell of this embodiment includes the following steps:

[0081] S10: ultrasonically clean the FTO transparent conductive substrate with deionized water, acetone, isopropanol and ethanol in sequence, and then put it into an oven for drying at 70°C for later use;

[0082] S50: Ozone treatment and / or plasma cleaning are performed on the FTO transparent conductive substrate, and then a 20 nm thick nickel oxide hole transport layer is prepared by spray pyrolysis deposition on one side of the FTO transparent conductive substrate;

[0083] S60: 461mg PbI 2 Dissolve together with 159mg MAI in a mixed solvent of DMF:DMSO=2:7 (volume ratio) to prepare MAPbI with a concentration of 1.45mol / L 3 precursor fluid;

[0084] S100: The MAPbI 3 The precursor solution was spin-coated on the surface of the NiO hole transport layer by the anti-solvent method to form a thin film. Rinse the MAPbI in the spin with 400 μL anisole 10 s before the end of coat...

Embodiment 2

[0093] Except for step S200, the other steps of the solar cell preparation method in this embodiment are the same as those in Embodiment 1. S200 in this embodiment is:

[0094] MAPbI 3 The films were transferred to a tube furnace filled with MABr steam, annealed at 140 °C for 8 min, and then transferred to a glove box to cool to obtain a MABr-deposited, doped and repaired perovskite light-absorbing layer.

[0095] The photoelectric conversion efficiency of the solar cell in this embodiment is 18.6%.

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Abstract

The invention provides a perovskite light absorption layer and a preparation method thereof, and a solar cell and a preparation method thereof. The perovskite light absorption layer comprises a perovskite substrate and amine salt. The amine salt is used for doping and repairing the perovskite matrix through steam deposition. According to the perovskite light absorption layer provided by the invention, the gas-solid reaction is generated between the amine salt steam and the formed perovskite substrate, the perovskite substrate is repaired, the amine salt in a steam form not only can quickly generate a gas-solid substitution reaction on the surface of the perovskite, but also can gradually permeate into a perovskite body phase, so that the gas-solid substitution reaction can be quickly performed on the surface of the perovskite; according to the perovskite light absorption layer and the preparation method thereof, the defect of element vacancy easily formed in perovskite is overcome, the defect of a perovskite matrix is reduced, the prepared perovskite light absorption layer is good in compactness and large in grain size, the quality and the working stability of the perovskite light absorption layer are remarkably improved, and the reproducibility is good.

Description

technical field [0001] The present application belongs to the technical field of optoelectronic functional materials and devices, and more particularly, relates to a perovskite light-absorbing layer and a preparation method thereof, a solar cell and a preparation method thereof. Background technique [0002] Since metal halide perovskite solar cells were widely studied in 2009, their photoelectric efficiency has rapidly increased from 3.8% to more than 25% in just over a decade, which is very close to the highest efficiency of monocrystalline silicon solar cells. Therefore, as an emerging third-generation photovoltaic material, perovskite has received extensive attention, and the preparation and modification technology of perovskite thin films has also become a research hotspot in this field. The morphology, thickness, crystallinity, and crystal size of perovskite films play a crucial role in their photovoltaic performance. A variety of perovskite thin film preparation proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/46
CPCH10K71/441H10K85/30H10K30/10
Inventor 杨世和肖爽李钰
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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