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Biodegradable memristor array with information storage function and preparation method

A technology for information storage and memristors, which is applied in the field of biodegradable memristor arrays and preparations, can solve the problems of multiple structural levels, limited solution conditions, and difficult integration, and achieve simple preparation process, good mechanical toughness, and stable switching performance effect

Pending Publication Date: 2022-03-15
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent CN106981568A discloses a flexible memristor with biological synapse simulation function using PET / ITO / ZnTPP / Al 2 o 3 / Al five-layer structure, the required material evaporation conditions are harsh and complex, and the existing technology is slightly insufficient; Chinese patent CN112687794A discloses a flexible memristor with self-healing ability and its preparation method is selected in ZnSO 4 -MnSO 4 Preparation of memristors by electrodeposition in a mixed solution limits the conditions of the solution and cannot be used and processed in other non-liquid environments. The existing technology is slightly deficient; Chinese patent CN110752294A discloses a flexible biological memristor for synapse bionics The preparation method of the device is to smear a natural material medium layer doped with metal ions on the conductive layer, the process cannot prepare devices in batches, the preparation cost and efficiency are limited, and the conductive path formed by the metal ions is not stable enough, and the existing technology is slightly insufficient.
[0005] (1) The performance of flexible memristors still cannot be compared with the switching characteristics of inorganic storage media
[0006] (2) The device processing is complex, the structure has many layers, and it is not easy to integrate in the electronic circuit. The preparation materials often contain materials that are easy to cause chemical pollution, and the waste devices are not easy to handle and become electronic waste.
[0007] (3) As a flexible device, the mechanical properties and biocompatibility of the currently studied devices are average, and it is difficult to meet the requirements for device implantation and biological wear.
[0008] (4) The complete process can only prepare a single device, and cannot mass-produce device arrays. It is used in information storage, image recognition and other fields with low efficiency and high cost

Method used

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  • Biodegradable memristor array with information storage function and preparation method
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  • Biodegradable memristor array with information storage function and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0050] Preparation method of biodegradable memristor array with information storage function:

[0051] Step 1: Mix the regenerated silk fibroin solution made of natural silk material with the enhancer in a certain ratio, disperse it in the culture dish without air bubbles, and form a smooth and highly transparent silk fibroin composite film after evaporating water;

[0052] Step 2: After the silk fibroin composite film is made, perform plasma cleaning treatment on the surface of the silk fibroin composite film;

[0053] The third step: cover the mask pattern on the surface of the silk fibroin composite film, and use a silver target with a purity of 99.9% for magnetron sputtering to manufacture multiple parallel lower electrode silver strips with a thickness of 300-500nm;

[0054] Step 4: Make a dielectric layer on the lower electrode, first pre-spin the regenerated silk fibroin solution to prepare a buffer layer, and after drying, mix 1mL of silver nanowire-regenerated silk fi...

Embodiment 2

[0058] Preparation method of biodegradable memristor array with information storage function:

[0059] Step 1: Mix the regenerated silk fibroin solution made of natural silk material with the enhancer in a certain ratio, disperse it in the culture dish without air bubbles, and form a smooth and highly transparent silk fibroin composite film after evaporating water;

[0060] Step 2: After the silk fibroin composite film is made, perform plasma cleaning treatment on the surface of the silk fibroin composite film;

[0061] The third step: cover the mask pattern on the surface of the silk fibroin composite film, and use a silver target with a purity of 99.9% for magnetron sputtering to manufacture multiple parallel lower electrode silver strips with a thickness of 300-500nm;

[0062] Step 4: Make a dielectric layer on the lower electrode, first pre-spin the regenerated silk fibroin solution to prepare a buffer layer, and after drying, mix 1mL of silver nanowire-regenerated silk fi...

Embodiment 3

[0066] Preparation method of biodegradable memristor array with information storage function:

[0067] Step 1: Mix the regenerated silk fibroin solution made of natural silk material with the enhancer in a certain ratio, disperse it in the culture dish without air bubbles, and form a smooth and highly transparent silk fibroin composite film after evaporating water;

[0068] Step 2: After the silk fibroin composite film is made, perform plasma cleaning treatment on the surface of the silk fibroin composite film;

[0069] The third step: cover the mask pattern on the surface of the silk fibroin composite film, and use a silver target with a purity of 99.9% for magnetron sputtering to manufacture multiple parallel lower electrode silver strips with a thickness of 300-500nm;

[0070] Step 4: Make a dielectric layer on the lower electrode, first pre-spin the regenerated silk fibroin solution to prepare a buffer layer, and after drying, mix 1mL of silver nanowire-regenerated silk fi...

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Abstract

The invention discloses a biodegradable memristor array with an information storage function and a preparation method, and relates to a flexible electronic device. The memristor array is of a vertical four-layer net structure and is provided with an upper electrode array, a dielectric layer, a lower electrode array and a flexible silk fibroin film substrate from top to bottom in sequence. The upper electrode array is a strip-shaped metal electrode array; the dielectric layer is of a three-layer structure composed of an upper degradable silk fibroin film layer, a lower degradable silk fibroin film layer and a conductive substance wrapped between the upper degradable silk fibroin film layer and the lower degradable silk fibroin film The lower electrode array is a strip-shaped metal electrode array, and the lower electrode array is perpendicular to the upper electrode array to form a net-shaped structure; the flexible silk fibroin film substrate is a transparent flexible silk fibroin film made of natural biological materials. And the device has stable performance and stable switching performance. The device has good mechanical toughness, still keeps complete memristive performance after multi-angle bending, and is easy to complete physical implementation of electronic products. The preparation process is simple, the operation is simple and convenient, the array preparation efficiency is high, the cost is low, and the device is degradable.

Description

technical field [0001] The invention relates to flexible electronic devices, in particular to a biodegradable memristor array with information storage function and a preparation method. Background technique [0002] Memristors are the fourth type of passive electronic components after resistors, capacitors, and inductors. Memristors are able to remember the amount of charge passed while generating and maintaining a steady current through the device. Memristor has the characteristics of random storage, small size, good integration, low power consumption, and fast read and write speed. Nonlinear memristors can change the resistance value by controlling the change of current to store information. The high resistance value is defined as "0", the low resistance value is defined as "1", and the "0" and "1" state switching digital information storage. As an important unit of integrated electronic devices, memristors are widely used in the Internet of Things, information security...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24G11C13/00
CPCG11C13/0002H10B63/80H10N70/24H10N70/881H10N70/011
Inventor 郭文熹刘镓榕陈厦平李胜优
Owner XIAMEN UNIV
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