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Three-dimensional layered boron-doped titanium carbide as well as preparation method and application thereof

A technology of boron doping and titanium carbide, applied in the direction of titanium carbide, carbide, electrochemical generator, etc., can solve the problems of complex preparation methods, unsatisfactory results, high cost, etc., and achieve simple and easy operation and inhibited growth , Improve the effect of cycle life

Pending Publication Date: 2021-11-26
HEBEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current commercial three-dimensional layered structure preparation methods are complex, costly and unsatisfactory.

Method used

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  • Three-dimensional layered boron-doped titanium carbide as well as preparation method and application thereof
  • Three-dimensional layered boron-doped titanium carbide as well as preparation method and application thereof
  • Three-dimensional layered boron-doped titanium carbide as well as preparation method and application thereof

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preparation example Construction

[0032] The invention provides a method for preparing a three-dimensional layered boron-doped titanium carbide, comprising the following steps:

[0033] 1) Put Ti 3 AlC 2 React with LiF in HCl solution, the obtained product is washed to neutrality, and Ti is obtained after drying 3 C 2 powder;

[0034] 2) Put Ti 3 C 2 powder, water and H 3 BO 3 Three-dimensional layered boron-doped titanium carbide can be obtained by mixed hydrothermal reaction.

[0035] In the present invention, the Ti 3 AlC 2 , The mass volume ratio of LiF and HCl solution is 10-2000mg: 10-3000mg: 1-50mL, preferably 50-1800mg: 100-2800mg: 5-45mL, more preferably 200-1500mg: 200-2500mg: 20-40mL .

[0036] In the present invention, the concentration of the HCl solution is 3-12 mol / L, preferably 5-10 mol / L, more preferably 8 mol / L.

[0037] In the present invention, in step 1), the reaction temperature is 20-30°C, the reaction time is 1-72h, preferably the reaction temperature is 22-28°C, the reactio...

Embodiment 1

[0047] (1) Preparation of three-dimensional layered boron-doped titanium carbide:

[0048] 1500mgTi at room temperature 3 AlC 2 Add 2000mgLiF to 25mL10mol / L HCl and react for 70 hours. The semi-finished product is washed with deionized water until neutral. In addition, the powder was collected by centrifugation at 8000 rpm for 20 minutes. Finally, the obtained product was dried in a vacuum oven at 100° C. for 10 hours. 800mgTi 3 C 2 The powder was evenly dispersed in deionized water. Then, 500mgH 3 BO 3 Added to Ti 3 C 2 in the dispersion and stirred for half an hour. The suspension was transferred to a polytetrafluoroethylene reaction furnace and heated at 380°C for 60 hours to produce a gray-black precipitate. After centrifugation, the obtained product is vacuum-dried at 100° C. to obtain a three-dimensional layered boron-doped titanium carbide.

[0049] from figure 1 The scanning electron micrographs of the three-dimensional layered boron-doped titanium carbide ...

Embodiment 2

[0065] 1000mgTi at room temperature 3 AlC 2 Add 1500mgLiF to 20mL5mol / LHCl and react for 60 hours. The semi-finished product is washed with deionized water until neutral. In addition, the powder was collected by centrifugation at 8000 rpm for 20 minutes. Finally, the obtained product was dried in a vacuum oven at 100° C. for 10 hours. 800mgTi 3 C 2 The powder was evenly dispersed in deionized water. Then, 1000mgH 3 BO 3 Added to Ti 3 C 2 in the dispersion and stirred for half an hour. The suspension was transferred to a polytetrafluoroethylene reaction furnace and heated at 400°C for 50 hours to produce a gray-black precipitate. After centrifugation, the obtained product is vacuum-dried at 100° C. to obtain a three-dimensional layered boron-doped titanium carbide.

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Abstract

The invention provides three-dimensional layered boron-doped titanium carbide as well as a preparation method and application thereof, and belongs to the technical field of lithium ion battery materials. According to the preparation method, a raw material Ti3AlC2 is etched into titanium carbide, then the titanium carbide and boric acid in different proportions are subjected to a hydrothermal reaction, and finally the three-dimensional layered boron-doped titanium carbide is obtained. According to the obtained three-dimensional layered boron-doped titanium carbide, the effect of uniform deposition is achieved due to existence of nucleation site boron, growth of lithium dendrites in the deposition and precipitation process is limited due to small interlayer spacing, the safety and coulombic efficiency of a lithium negative electrode are improved to a great extent, the cycle life of the lithium negative electrode is prolonged to a great extent, and the preparation method is simple and easy to operate and suitable for industrial production.

Description

technical field [0001] The invention relates to the technical field of lithium-ion battery materials, in particular to a three-dimensional layered boron-doped titanium carbide and its preparation method and application. Background technique [0002] In recent years, lithium-ion batteries, as energy storage devices, have developed very rapidly. Due to the advantages of high energy density, long cycle life, less self-discharge, and no memory effect, lithium-ion batteries are widely used in various industries, so lithium-ion batteries have attracted the attention of many researchers. However, during the use of lithium-ion batteries, it was found that as the reaction progressed, metal lithium grew uncontrollable lithium dendrites, which pierced the separator, resulting in a short circuit of the battery or the generation of dead lithium, resulting in a waste of lithium resources. In order to deal with this problem, the current common method is to load metallic lithium in materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/921H01M4/66H01M10/0525H01M10/42
CPCC01B32/921H01M4/667H01M4/663H01M10/0525H01M10/4235C01P2002/54C01P2004/03C01P2006/40Y02E60/10
Inventor 吴娜张奇月赵梦凡陈新钰
Owner HEBEI NORMAL UNIV
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