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Perovskite light absorption layer film and surface defect passivation method thereof

A light absorbing layer, perovskite technology, applied in the field of solar cells, can solve problems such as affecting device efficiency, and achieve the effects of improving film quality, preventing erosion, and improving photoelectric conversion efficiency and stability

Pending Publication Date: 2021-11-19
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not enough to modify the defects at the grain boundary. The defect density on the surface of the perovskite film is much higher than the defect density inside the film, which seriously affects the device efficiency.

Method used

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  • Perovskite light absorption layer film and surface defect passivation method thereof
  • Perovskite light absorption layer film and surface defect passivation method thereof
  • Perovskite light absorption layer film and surface defect passivation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] (1) 0.507g PbI 2 , 0.172g FAI, 0.081g PbBr 2 , 0.023g MABr and 0.020g CsI were dissolved in 800mL N,N-dimethylformamide (DMF) and 200mL dimethylsulfoxide (DMSO) mixed solvent under stirring, and stirred for more than 4.5h to prepare a perovskite precursor solution .

[0045] (2) Add pyrrole to chlorobenzene to prepare a concentration of 3mmol L -1 additive solution.

[0046] (3) Evenly drop-coat the perovskite precursor solution on the FTO conductive glass substrate, start the spin coater, and start with 1000rpms -1 Acceleration to 1000rpm and rotate at low speed for 10s, then at 2000rpm s -1 The acceleration is accelerated to 5500rpm and rotated at a high speed for 25s to prepare a perovskite film; 2) the resulting surface additive solution is dripped on the surface of the perovskite film before the high-speed rotation of the spin coater stops; then After being dried in the atmosphere, it is dried at 100° C. and annealed for 60 minutes to obtain a surface-modified...

Embodiment 2

[0048] (1) 0.507g PbI 2 , 0.172g FAI, 0.081g PbBr 2 , 0.023g MABr and 0.020g CsI were dissolved in 800mL N,N-dimethylformamide (DMF) and 200mL dimethylsulfoxide (DMSO) mixed solvent under stirring, and stirred for more than 4.5h to prepare a perovskite precursor solution .

[0049] (2) Add pyrrole to chlorobenzene to prepare a concentration of 6mmol L -1 additive solution.

[0050] (3) Evenly drop-coat the perovskite precursor solution on the FTO conductive glass substrate, start the spin coater, and start with 1000rpms -1 Acceleration to 1000rpm and rotate at low speed for 10s, then at 2000rpm s -1 The acceleration is accelerated to 5500rpm and rotated at a high speed for 25s to prepare a perovskite film; 2) the resulting surface additive solution is dripped on the surface of the perovskite film before the high-speed rotation of the spin coater stops; then After being dried in the atmosphere, it is dried at 100° C. and annealed for 60 minutes to obtain a surface-modified...

Embodiment 3

[0052] (1) 0.507g PbI 2 , 0.172g FAI, 0.081g PbBr 2 , 0.023g MABr and 0.020g CsI were dissolved in 800mL N,N-dimethylformamide (DMF) and 200mL dimethyl sulfoxide (DMSO) mixed solvent under stirring, and stirred for more than 4.5h to prepare a perovskite precursor solution.

[0053] (2) Add pyrrole to chlorobenzene to prepare a concentration of 9mmol L -1 additive solution.

[0054] (3) Evenly drop-coat the perovskite precursor solution on the FTO conductive glass substrate, start the spin coater, and start with 1000rpms -1 Acceleration to 1000rpm and rotate at low speed for 10s, then at 2000rpm s -1 The acceleration is accelerated to 5500rpm and rotated at a high speed for 25s to prepare a perovskite film; 2) the resulting surface additive solution is dripped on the surface of the perovskite film before the high-speed rotation of the spin coater stops; then After being dried in the atmosphere, it is dried at 100° C. and annealed for 60 minutes to obtain a surface-modified...

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Abstract

The invention discloses a perovskite light absorption layer film and a surface defect passivation method thereof. The method comprises the steps of 1, dissolving PbI2, FAI, PbBr2, MABr and CsIb in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide, and preparing a perovskite precursor solution, 2, dissolving pyrrole in an organic solvent to prepare an additive solution, 3, dispensing the perovskite precursor solution on an FTO conductive glass substrate, starting a spin coater, accelerating to a rotating speed of 1000rpm at an acceleration of 1000rpm s<-1> and rotating for 10s, then accelerating to a rotating speed of 5500rpm at an acceleration of 2000rpm s<-1> and rotating for 25s, and preparing a perovskite thin film, quickly dropwise adding the additive solution obtained in the step 2 on the surface of the perovskite thin film 5 seconds before the high-speed rotation is stopped, and drying in an argon atmosphere to obtain the perovskite thin film. A pyrrole additive is introduced to the surface of a perovskite light absorption layer film, so that the surface defect density is reduced, and a hydrophobic layer is formed on the surface.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a perovskite light-absorbing layer film and a method for passivating surface defects thereof. Background technique [0002] Facing the increasingly serious depletion of traditional fossil energy, finding and developing new clean and renewable energy has become a new mission and challenge for researchers in the 21st century. At present, researchers have put more and more attention on the development and utilization of new energy sources such as solar energy, wind energy, water energy, tidal energy, geothermal energy, and biomass energy. For the effective development and utilization of solar energy, the more reliable means are mainly to design and manufacture solar cell devices, and use the photovoltaic effect of semiconductors to realize the conversion of sunlight energy into electrical energy. [0003] Since the last century, after a large number of experimental ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/44
CPCH10K71/12H10K30/88Y02E10/549
Inventor 殷立雄李潞瑶韩浪刘长青黄剑锋郭瑶李书航赵津陈禹飞
Owner SHAANXI UNIV OF SCI & TECH
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