Cadmium-free quantum dots and preparation method thereof

A technology of quantum dots and indium quantum dots is applied in the field of cadmium-free quantum dots and their preparation, which can solve the problems of dimensional uniformity, influence on luminous efficiency and stability, and unfavorable large-scale preparation of indium phosphide quantum dots. Defects, improved thermal stability, simple and safe experimental process

Pending Publication Date: 2021-11-12
浙江臻纳科技有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the indium phosphide quantum dot core is easily oxidized at high temperature, which not only inhibits the secondary growth of the indium phosphide core, but also has a large number of surface defects that affect the luminous efficiency and stability, and the size uniformity is also affected.
In order to improve the performance of indium phosphide quantum dots, the main method currently used is to add a weakly acidic reagent (such as hydrofluoric acid) to surface treat the indium phosphide core during nucleation. However, this method increases the complexity of the process and does not Conducive to large-scale preparation of indium phosphide quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cadmium-free quantum dots and preparation method thereof
  • Cadmium-free quantum dots and preparation method thereof
  • Cadmium-free quantum dots and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] The invention provides a method for preparing cadmium-free quantum dots: comprising the following steps: S1, mixing phosphorus precursors, fatty acid indium precursors and non-coordinating solvents at a first temperature, and raising them to a second temperature to obtain phosphating Indium quantum dot core; S2, a reaction system in which the indium halide precursor is added dropwise to the indium phosphide quantum dot core to perform surface treatment on the indium phosphide core to obtain cadmium-free quantum dots. By selecting the fatty acid indium precursor as the indium source in the first step, it is beneficial to the nucleation of indium phosphide quantum dots, and the small-sized indium phosphide quantum dot core with few surface defects is generated. When the second step continues to use fatty acid When the indium precursor is used as the indium source, the surface defects of the grown indium phosphide quantum dots will increase instead, which is not conducive t...

Embodiment 1

[0039] 1) Preparation of indium phosphide core:

[0040] Add 0.2mmol indium myristate, 10mL 1-octadecene, 0.1mmol zinc stearate to a three-neck flask, vacuumize at 120°C for 2 hours to remove water and oxygen, add 0.1mmol tris(trimethylsilyl) Phosphine, and heated to a second temperature of 280° C., and maintained for 5 minutes, then added indium chloride glycerol solution (20 mg / mL) dropwise to complete the preparation of indium phosphide quantum dot cores.

[0041] 2) Preparation of InP / ZnSe:

[0042] Add 0.8 mmol of zinc stearate into a three-neck flask, then slowly add 1 mmol of TOP-Se, and keep warm for 1 h to form InP / ZnSe quantum dots.

[0043] 3) Preparation of InP / ZnSe / ZnS:

[0044] On the basis of the quantum dots prepared in step 2), continue to add 2mmol of Zn-OA and 2mmol of 1-dodecanethiol, keep warm for 30min, then heat up to 280°C, continue to add 2mmol of Zn-OA and 2mmol of 1 -Dodecanethiol, after 30 minutes of heat preservation, the temperature was raised to...

Embodiment 2

[0052] This embodiment is basically the same as Embodiment 1, the difference is:

[0053] In this comparative example, the indium chloride glycerol solution in step 1) was replaced by an indium bromide glycerol solution.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
full width at half maximumaaaaaaaaaa
Login to view more

Abstract

The invention relates to the technical field of quantum dot synthesis, in particular to cadmium-free quantum dots and a preparation method thereof. The method comprises the steps of: mixing a phosphorus precursor, an indium aliphatate precursor and a non-coordination solvent at a first temperature, and heating to the second temperature for a reaction to obtain indium phosphide quantum dot cores; and dropwise adding an indium halide precursor into the reaction system of the indium phosphide quantum dot cores, and carrying out surface treatment on the indium phosphide quantum dot cores to obtain cadmium-free quantum dots. According to the method disclosed by the invention, the surface defects of the cadmium-free quantum dots can be reduced, the morphology, luminous efficiency and stability of the indium phosphide quantum dots are remarkably improved, and the cadmium-free indium phosphide quantum dots prepared simply at low cost are relatively narrow in half-peak width and high in fluorescence yield.

Description

technical field [0001] The invention relates to the technical field of quantum dot synthesis, in particular to a cadmium-free quantum dot and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have attracted much attention due to their excellent optical properties such as high luminous efficiency, wide color gamut, long life, low cost, and solution processing, and are widely used in solid-state lighting and new display fields. At present, the marketable quantum dots are cadmium-based quantum dots. However, its inherent toxicity limits the industrial application and development of quantum dots, and also stimulates extensive research and attention on low-toxicity cadmium-free quantum dots. [0003] Indium phosphide (InP) quantum dots are currently the most common cadmium-free quantum dot material, which has comparable optical properties to cadmium-based quantum dots, and is a cadmium-free quantum dot material that has been studied more. How...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88C09K11/70B82Y20/00B82Y30/00
CPCC09K11/025C09K11/02C09K11/883C09K11/70B82Y20/00B82Y30/00
Inventor 曹璠杨绪勇王胜
Owner 浙江臻纳科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap