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Solid phase doping method, device, heavily arsenic-doped silicon single crystal production system and production method

A technology of silicon single crystal and re-doping, which is applied in the field of solid-phase doping methods and devices, can solve the problems of low doping efficiency and crystal transformation, and achieve the goal of improving doping efficiency, reducing environmental pollution, and reducing the probability of crystal transformation Effect

Active Publication Date: 2022-12-02
宁夏中欣晶圆半导体科技有限公司
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Problems solved by technology

[0004] In view of this, the present invention provides a solid-phase doping method to solve the technical problems of low doping efficiency and easy crystal change in the prior art

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  • Solid phase doping method, device, heavily arsenic-doped silicon single crystal production system and production method
  • Solid phase doping method, device, heavily arsenic-doped silicon single crystal production system and production method
  • Solid phase doping method, device, heavily arsenic-doped silicon single crystal production system and production method

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experiment example 1

[0070] Production of target heavily arsenic-doped silicon single crystal through the following process: charging - chemical material - high temperature treatment - primary stabilization - primary seed crystal temperature test - solid phase doping - secondary seed crystal temperature test - seeding - shouldering - etc. Path - Finishing.

[0071] Among them, during the high-temperature treatment process, the temperature is raised to make the liquid surface temperature ≥ 1520°C, and the furnace pressure is 2kPa, and the crucible rotation speed is 1rp / min, and it is maintained for 1h. The feeding amount of silicon is 120kg, and the feeding amount of arsenic dopant is 950g. Process parameters of other steps (including furnace pressure, argon gas flow rate, temperature, crucible rotation speed, single crystal growth rate, etc.) are general meaning parameters that can be obtained by those skilled in the art.

[0072] The probability of crystal transformation under this process is co...

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Abstract

The invention provides a solid-phase doping method, device, heavy arsenic-doped silicon single crystal production system and production method, and belongs to the technical field of heavily doped silicon single crystal. In the solid-phase doping method, the non-gasified solid dopant or the dopant containing the solid dopant is put into the melted silicon. The solid-phase doping device includes a quartz cup and a quartz floating rod. The upper end of the quartz cup is open and is provided with a hook for hanging on the single crystal furnace. The lower end of the quartz cup is provided with a tapered material guide. The lower end is connected with a feeding pipe. The quartz floating rod passes through the feeding pipe along the axial direction of the feeding pipe, the upper end of the quartz floating rod is provided with a float valve, the floating valve can cover the upper end of the feeding pipe, and the lower end of the quartz floating rod is provided with a float. Practice shows that using the solid-phase doping method provided by the present invention can increase the ratio of low-resistivity products, reduce the probability of crystal transformation, and reduce the amount of arsenic dopant by about 28.4% compared with the gas-phase doping process. The solid-phase doping device has a simple structure and is easy to operate.

Description

technical field [0001] The invention belongs to the technical field of heavily doped silicon single crystal, and specifically relates to a solid-phase doping method, device, production system and production method of heavily arsenic-doped silicon single crystal. Background technique [0002] At present, with the rise of photovoltaic power generation and new energy electric vehicle industries, the demand for semiconductor power devices is increasingly strong, resulting in higher and higher requirements for the resistivity characteristics of N-type wafers for power devices such as IGBTs. At present, the resistivity specification requirements for N-type heavily doped arsenic are generally below 0.003Ω.cm, and very few requirements are already below 0.002Ω.cm. However, at present, the resistivity of large-size (above 8 inches) arsenic-doped silicon single crystals is generally in the range of 0.0035-0.0045Ω.cm, which cannot meet the demand for low resistivity. [0003] At prese...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/04C30B29/06
CPCC30B15/04C30B29/06
Inventor 周文辉王忠保石鑫
Owner 宁夏中欣晶圆半导体科技有限公司
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