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Solid-phase doping method, solid-phase doping device, heavily arsenic-doped silicon single crystal production system and production method thereof

A production method, silicon single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low doping efficiency, crystal transformation, etc., to improve doping efficiency, reduce environmental pollution, and reduce residual Effect

Active Publication Date: 2021-11-02
宁夏中欣晶圆半导体科技有限公司
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Problems solved by technology

[0004] In view of this, the present invention provides a solid-phase doping method to solve the technical problems of low doping efficiency and easy crystal change in the prior art

Method used

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  • Solid-phase doping method, solid-phase doping device, heavily arsenic-doped silicon single crystal production system and production method thereof
  • Solid-phase doping method, solid-phase doping device, heavily arsenic-doped silicon single crystal production system and production method thereof
  • Solid-phase doping method, solid-phase doping device, heavily arsenic-doped silicon single crystal production system and production method thereof

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experiment example 1

[0070] Production of target heavily arsenic-doped silicon single crystal through the following process: charging - chemical material - high temperature treatment - primary stabilization - primary seed crystal temperature test - solid phase doping - secondary seed crystal temperature test - seeding - shouldering - etc. Path - Finishing.

[0071] Among them, during the high-temperature treatment process, the temperature is raised to make the liquid surface temperature ≥ 1520°C, and the furnace pressure is 2kPa, and the crucible rotation speed is 1rp / min, and it is maintained for 1h. The feeding amount of silicon is 120kg, and the feeding amount of arsenic dopant is 950g. Process parameters of other steps (including furnace pressure, argon gas flow rate, temperature, crucible rotation speed, single crystal growth rate, etc.) are general meaning parameters that can be obtained by those skilled in the art.

[0072] The probability of crystal transformation under this process is co...

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Abstract

The invention provides a solid-phase doping method, a solid-phase doping device, a heavily arsenic-doped silicon single crystal production system and a production method thereof, and belongs to the technical field of heavily arsenic-doped silicon single crystals. According to the solid-phase doping method, an ungasified solid doping agent or a doping material containing the solid doping agent is put into molten silicon. The solid-phase doping device comprises a quartz cup and a quartz floating rod, an opening is formed in the upper end of the quartz cup, the quartz cup is provided with a hook used for being hung on the single crystal furnace, a conical material guiding part is arranged at the lower end of the quartz cup, and the lower end of the material guiding part is connected with a discharging pipe. The quartz floating rod penetrates through the discharging pipe in the axial direction of the discharging pipe, a floating valve is arranged at the upper end of the quartz floating rod and can cover the upper end of the discharging pipe, and a floater is arranged at the lower end of the quartz floating rod. The practice shows that by adopting the solid-phase doping method provided by the invention, the ratio of low-resistivity products can be increased, the probability of crystal change is reduced, and the dosage of the arsenic doping agent is reduced by about 28.4% compared with that of a gas-phase doping process. The solid-phase doping device is simple in structure and convenient to operate.

Description

technical field [0001] The invention belongs to the technical field of heavily doped silicon single crystal, and specifically relates to a solid-phase doping method, device, production system and production method of heavily arsenic-doped silicon single crystal. Background technique [0002] At present, with the rise of photovoltaic power generation and new energy electric vehicle industries, the demand for semiconductor power devices is increasingly strong, resulting in higher and higher requirements for the resistivity characteristics of N-type wafers for power devices such as IGBTs. At present, the resistivity specification requirements for N-type heavily doped arsenic are generally below 0.003Ω.cm, and very few requirements are already below 0.002Ω.cm. However, at present, the resistivity of large-size (above 8 inches) arsenic-doped silicon single crystals is generally in the range of 0.0035-0.0045Ω.cm, which cannot meet the demand for low resistivity. [0003] At prese...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/06
CPCC30B15/04C30B29/06
Inventor 周文辉王忠保石鑫
Owner 宁夏中欣晶圆半导体科技有限公司
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