Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor epitaxial wafer and method for manufacturing same

A technology of epitaxial wafers and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as insufficient, heavy metal pollution of semiconductor substrates, etc., and achieve the effect of high gettering capacity

Pending Publication Date: 2021-09-28
SUMCO CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, these metal contaminations have been improved to some extent by replacing the constituent materials of the epitaxial growth furnace with materials with excellent corrosion resistance, etc., but they are not sufficient.
On the other hand, in the manufacturing process of the latter solid-state imaging device, heavy metal contamination of the semiconductor substrate is a concern in various processes such as ion implantation, diffusion, and oxidation heat treatment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor epitaxial wafer and method for manufacturing same
  • Semiconductor epitaxial wafer and method for manufacturing same
  • Semiconductor epitaxial wafer and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0076] (invention example)

[0077] An n-type silicon wafer (diameter: 300 mm, thickness: 775 μm, dopant type: phosphorus, resistivity: 20 Ω·cm) obtained from a CZ single crystal silicon ingot was prepared. Next, using a cluster ion generator (manufactured by NISSIN ION EQUIPMENT CO.LTD., CLARIS (registered trademark)), using propylamine (C 3 h 9 N) As a raw material gas, generate and extract CH 4 N cluster ions at an accelerating voltage of 80keV / Cluster (the accelerating voltage per carbon atom is 32keV / atom, the accelerating voltage per hydrogen atom is 2.7keV / atom, and the accelerating voltage per nitrogen atom is 37.3keV / atom) The surface of the silicon wafer is irradiated under the irradiation condition. In addition, the dose when irradiating cluster ions was set to 1.0×10 15 ions / cm 2 . Converted to the number of carbon atoms is 1.0×10 15 atoms / cm 2 , converted to the number of hydrogen atoms is 4.0×10 15 atoms / cm 2 , converted to the number of nitrogen atoms ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Half widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to View More

Abstract

The present invention provides a method for manufacturing a semiconductor epitaxial wafer having higher gettering capability. This method for manufacturing a semiconductor epitaxial wafer 100 is characterized by having: a first step in which the surface 10A of a semiconductor wafer 10 is irradiated with cluster ions 12 including carbon, oxygen, and nitrogen as constituent elements, and a modification layer 14 is formed on the surface part of the semiconductor wafer 10, the modification layer 14 being such that the constituent elements of the cluster ions are in solid solution; and a second step in which an epitaxial layer 16 is formed on the modification layer 14 of the semiconductor wafer 10.

Description

technical field [0001] The invention relates to a semiconductor epitaxial wafer and a manufacturing method thereof. Background technique [0002] Semiconductor epitaxial wafers formed with epitaxial layers on semiconductor wafers represented by silicon wafers are used to make MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), DRAMs (Dynamic Random Access Device substrates for various semiconductor devices such as dynamic random access memory (Dynamic Random Access Memory), power transistors, and back-illuminated solid-state imaging devices. [0003] Among them, metal contamination is cited as a main factor deteriorating the characteristics of semiconductor devices. For example, in a back-illuminated solid-state imaging device, metal mixed into a semiconductor epitaxial wafer serving as a substrate of the device becomes a factor that increases the dark current of the solid-state imaging device, causing a defect called a white damage defect. The back-illuminated s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/265H01L21/322
CPCH01L21/26566H01L21/0237H01L21/02658H01L21/0262H01L21/02532H01L21/02381H01L21/02439H01L21/02513H01L21/26506H01L29/36
Inventor 铃木阳洋门野武广濑谅
Owner SUMCO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com