Rare earth borate crystal material, and preparation method and application thereof

A crystal material, borate technology, applied in the direction of polycrystalline material growth, crystal growth, luminescent materials, etc., can solve the problems of low quantum yield, limited application, etc., to achieve good thermal stability, low price, not easy to deliquescence. Effect

Inactive Publication Date: 2021-08-06
DEZHOU UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The synthesis temperature of phosphate compounds is often greater than 1000 °C, and silicate-based luminescent materials generally have low quantum yields, which limits their applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare earth borate crystal material, and preparation method and application thereof
  • Rare earth borate crystal material, and preparation method and application thereof
  • Rare earth borate crystal material, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Growth of Gadolinium-Containing Borate Compound Rb by Flux Method 2 LiGdB 2 o 6 crystals.

[0053] 0.0006molRb 2 CO 3 , 0.0003molLi 2 CO 3 , 0.0001molGd 2 o 3 , 0.001molH 3 BO 3 Mix and grind evenly, transfer to a platinum crucible, place the platinum crucible containing the mixed raw materials in a muffle furnace, raise the temperature to 800°C at a rate of 60°C / h, and keep at this temperature for 24h to make the melt fully homogeneous. Then the melt was slowly cooled to 500°C at a cooling rate of 5°C / h, the power was turned off, and the melt was naturally cooled to room temperature to obtain transparent millimeter-sized Rb 2 LiGdB 2 o 6 (referred to as RLGBO) small crystals, the XRD spectrum is as follows figure 1 shown.

[0054] Using X-ray single crystal diffractometer to determine the structure of the obtained crystal, the crystal structure is shown in figure 2 shown. Crystalclear software was used for refinement of unit cell parameters and data re...

Embodiment 2

[0066] Growth of Borate Compound Rb Containing Gadolinium by Flux Method 2 LiGdB 2 o 6 crystals.

[0067] 0.0004mol Rb 2 CO 3 , 0.0001mol Li 2 CO 3 , 0.0001mol Gd 2 o 3 , 0.0004mol H 3 BO 3 Mix and grind evenly, transfer to a platinum crucible, place the platinum crucible containing the mixed raw materials in a muffle furnace, raise the temperature to 800°C at a rate of 60°C / h, and keep at this temperature for 24h to make the melt fully homogeneous. Then the melt was slowly cooled to 500°C at a cooling rate of 5°C / h, the power was turned off, and the melt was naturally cooled to room temperature to obtain transparent millimeter-sized Rb 2 LiGdB 2 o 6(RLGBO for short) small crystals.

Embodiment 3

[0069] Growth of Gadolinium-Containing Borate Compound Rb by Flux Method 2 LiGdB 2 o 6 crystals.

[0070] 0.0005mol Rb 2 CO 3 , 0.0004mol Li 2 CO 3 , 0.0001mol Gd 2 o 3 , 0.0012mol H 3 BO 3 Mix and grind evenly, transfer to a platinum crucible, place the platinum crucible containing the mixed raw materials in a muffle furnace, raise the temperature to 800°C at a rate of 60°C / h, and keep at this temperature for 24h to make the melt fully homogeneous. Then the melt was slowly cooled to 500°C at a cooling rate of 5°C / h, the power was turned off, and the melt was naturally cooled to room temperature to obtain transparent millimeter-sized Rb 2 LiGdB 2 o 6 (RLGBO for short) small crystals.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a rare earth borate crystal material, and a preparation method and application thereof. The chemical formula of the rare earth borate crystal material is Rb2LiGdxLn1-xB2O6, and the rare earth borate crystal material belongs to an orthorhombic crystal system and a pbcm space group; and 0.01 <= x <= 1, and Ln is a rare earth element. A rubidium-containing compound, a lithium-containing compound, a gadolinium-containing compound, a rare earth element-containing compound and a boron-containing compound are used as raw materials, and a high-temperature solid-phase synthesis method or a fluxing agent method is adopted for preparation. The rare earth borate crystal material provided by the invention has the advantages of stable physical and chemical properties, difficulty in deliquescence in air and the like.

Description

technical field [0001] The invention belongs to the field of luminescent materials, and relates to a rare earth borate crystal material and a preparation method and application thereof. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] White LEDs are considered to be the fourth-generation lighting sources that are expected to replace traditional lighting due to their advantages of energy saving, environmental protection, long life, small size, and short response time. The main solution adopted by commercial white LEDs at present is to coat light-emitting materials on the light-emitting diodes to achieve light output. Currently, commercial luminescent materials include blue...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B28/02C30B9/00C09K11/77
CPCC30B29/22C30B9/00C30B28/02C09K11/7712
Inventor 贾贞李洪亮辛炳炜吕元琦孙建之王志刚
Owner DEZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap