High-purity aluminum oxide ceramic substrate and preparation process thereof

A high-purity alumina and ceramic substrate technology, applied in the field of high-purity alumina ceramic substrate and its preparation process, can solve the problems of volume resistivity and thermal conductivity are not very good, and achieve the effect of easy realization

Pending Publication Date: 2021-08-06
SINOCERAM TECH (ZHENGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] 96% alumina ceramics are widely used due to their high cost performance, but their volume resistivity and thermal conductivity are not very good

Method used

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  • High-purity aluminum oxide ceramic substrate and preparation process thereof
  • High-purity aluminum oxide ceramic substrate and preparation process thereof
  • High-purity aluminum oxide ceramic substrate and preparation process thereof

Examples

Experimental program
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Effect test

preparation example Construction

[0028] The preparation process of the above-mentioned high-purity alumina ceramic substrate is as follows:

[0029] Add the formula amount of α-alumina powder, magnesium aluminum spinel powder, dispersant and solvent into the ball mill in proportion, and disperse by ball milling for 24-48 hours; then add adhesive and plasticizer for secondary ball milling for 20-24 hours;

[0030] The material is discharged from the ball mill, and the cast slurry with a viscosity of 20000-30000mPa·s is obtained by vacuum defoaming; the cast slurry is cast on a cast machine, and the obtained cast green sheet is cut into corresponding the size and shape of

[0031] It is sintered in a high-temperature kiln, the temperature of the sintering temperature zone in the high-temperature kiln is 1580°C-1620°C, and the high-temperature insulation is kept for 3-5 hours to obtain a high-purity alumina ceramic substrate.

[0032] First, add the α-alumina powder, magnesium aluminum spinel powder, dispersant...

Embodiment 1

[0035] A high-purity alumina ceramic substrate and its preparation process are prepared from the following raw materials in parts by weight: 99% of the total weight of inorganic powder D 50 The α-alumina powder with a particle size of 1.5 μm is the main phase material, and the total weight of the inorganic powder is 0.7% D 50 Magnesium aluminum spinel powder with a particle size of 0.9 μm, and 0.15% of the total weight of the inorganic powder 50 Lanthanum oxide with a particle size of 0.8 μm and 0.15% of the total weight of inorganic powder D 50 Yttrium oxide with a particle size of 0.8 μm is used as a special additive, and the four together form an inorganic powder. And add solvent 28% (addition is 28% of inorganic powder gross weight), dispersant 0.5% (addition is 0.8% of inorganic powder gross weight), ball mill disperses 24 hours; Add binding agent 7% ( The addition amount is 7% of the total weight of the inorganic powder) and 3% of the plasticizer (the addition is 3% of...

Embodiment 2

[0037] A high-purity alumina ceramic substrate and its preparation process are prepared from the following raw materials in parts by weight: D 50 The α-alumina powder with a particle size of 0.8 μm is the main phase material, and the total weight of the inorganic powder is 0.4% D50 Magnesium aluminum spinel powder with a particle size of 0.5 μm, and 0.05% of the total weight of the inorganic powder 50 Lanthanum oxide with a particle size of 0.5 μm and 0.05% of the total weight of inorganic powder D 50 The yttrium oxide with a particle diameter of 0.5 μm is used as a special additive to form an inorganic powder, and 28% of a solvent (the addition is 28% of the total weight of the inorganic powder) and 1.6% of a dispersant (the addition is 28% of the total weight of the inorganic powder) are added. 1.6%), ball milling and dispersing for 48 hours; add 9% of binding agent (the addition is 9% of the total weight of the inorganic powder) and 4% of plasticizer (the addition is 4% of ...

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Abstract

The invention discloses a high-purity aluminum oxide ceramic substrate and a preparation process thereof. The ceramic substrate adopts specially purified superfine alpha-aluminum oxide powder as a main phase material, magnesium aluminate spinel powder as a fluxing agent and lanthanum oxide and yttrium oxide as additives; the requirements of the alumina powder are as follows: the purity of Al2O3 is greater than or equal to 99.9%, the content of SiO2 is less than 0.05%, the content of Fe2O3 is less than 0.02%, and the content of Na2O is less than 0.02%; the conversion rate of alpha-Al2O3 is greater than or equal to 96%; and the conductivity is less than 100s / cm. and 2, the volume density of the ceramic substrate prepared by the preparation process of the high-purity aluminum oxide ceramic substrate is greater than or equal to 3.92 g / cm < 3 >, the volume resistivity is greater than or equal to 10145 omega.cm, the heat conductivity is greater than 2930W / (m.K), the dielectric constant is 9-10 (1MHz, 25 DEG C), and the bending strength is greater than or equal to 450MPa. The preparation process adopts a tape casting process and a normal-pressure sintering method.

Description

technical field [0001] The invention relates to a high-purity alumina ceramic substrate used in the construction of semiconductor power modules, power modules, and 5G base stations and its preparation process; specifically, it is an alumina ceramic substrate with high volume resistivity and high bending strength and Its preparation process. Background technique [0002] 96% alumina ceramics are widely used due to their high cost performance, but their volume resistivity and thermal conductivity are not very good. [0003] In recent years, ceramic substrates have been widely used in electronic device packaging due to their high thermal conductivity, good heat resistance, low thermal expansion coefficient, high mechanical strength, good insulation, corrosion resistance, and radiation resistance. With the continuous increase in the reliability requirements of device packaging in microwave power, semiconductor power modules, 5G base station construction and other application fi...

Claims

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Application Information

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IPC IPC(8): C04B35/10C04B35/622C04B35/63C04B35/64
CPCC04B35/10C04B35/622C04B35/6303C04B35/64C04B2235/3201C04B2235/3272C04B2235/3225C04B2235/3227C04B2235/3418C04B2235/6025C04B2235/6567C04B2235/96C04B2235/9607
Inventor 吴崇隽段明新丁志静孔丽萍牛晓阳张晓娜
Owner SINOCERAM TECH (ZHENGZHOU) CO LTD
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