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Film preparation method for improving application frequency of film

A thin film preparation and thin film technology, which is applied in the field of preparation of increasing the application frequency of NiFe thin films, can solve problems such as low magnetic permeability, and achieve the effect of high magnetic permeability and high application frequency

Inactive Publication Date: 2021-07-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Y. Zhang (Y. Zhang, Y. Ren, J. Lv, et al. Tunable high-frequency magnetic properties of NiFe films on triangular wave-like surface of Al 2 o 3 substrate[J].Chemical Physics Letters,2020,749:137411.) using periodic triangular wave structure Al 2 o 3 The NiFe film is deposited on the substrate, and the anisotropy is introduced by the magnetic charge mechanism, so as to control the application frequency of the film. Although the resonance frequency reaches 5.4GHz, the magnetic permeability is less than 250

Method used

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  • Film preparation method for improving application frequency of film

Examples

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Embodiment 1

[0026] A thin film preparation method for increasing the application frequency of the thin film, specifically comprising the following steps:

[0027] Step 1. Turn on the main power supply and the switches of each part of the electron beam evaporation system, turn on the water cooler, mechanical pump, molecular pump, film thickness meter, and electron gun in turn to preheat the equipment;

[0028] Step 2, ultrasonically clean the Si(100) substrate with a size of 5mm×5mm in acetone, ethanol, and deionized water for 15 minutes in sequence, and dry it for later use;

[0029] Step 3. Put the NiFe target into the water-cooled crucible in the vacuum chamber, place the substrate on the sample holder, fix one end of the substrate on the sample holder, and lift the other end so that the substrate and the sample holder are at 5°. A permanent magnet is used to apply a magnetic field with a magnitude of 104Oe and a direction parallel to the edge of the substrate fixed on the sample holder...

Embodiment 2

[0034] Compared with Embodiment 1, this embodiment differs in that: in step 3, the angle between the substrate and the sample holder is 10°. All the other steps are the same as in Example 1.

Embodiment 3

[0036] Compared with Embodiment 1, this embodiment differs in that: in step 3, the angle between the substrate and the sample holder is 15°. All the other steps are the same as in Example 1.

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Abstract

The invention discloses a preparation method for improving the application frequency of a NiFe film and belongs to the technical field of film preparation. The method comprises the following steps of (1) cleaning a substrate; (2) fixing the substrate to a specimen holder, forming an angle theta between the substrate and the specimen holder, and applying a magnetic field to the substrate; and (3) pre-melting the material for 4-5 minutes by using a high-vacuum electron beam evaporation system under the conditions that the background vacuum is 1.3*10<-4> Pa to 2.0*10<-4> Pa, the current of an electron gun is 30 mA to 40 mA during material pre-melting, and the voltage is 10 kV; and after material pre-melting is finished, setting the evaporation rate to be 0.1 nm / s to 0. 7 nm / s, and depositing a soft magnetic thin film on the substrate. The application frequency of the obtained soft magnetic film is larger than 1 GHz (the highest frequency is 1.39 GHz), the magnetic conductivity reaches about 1000, and the film with high application frequency and high magnetic permeability is obtained.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and in particular relates to a preparation method for increasing the application frequency of NiFe thin films. Background technique [0002] With the advent of the information age, especially the rapid development of 5G technology, it shows the great changes in electronic information technology. As an indispensable component in many fields (such as microwave and radio frequency, electromagnetic shielding, and magnetic sensor), magnetic devices must also develop towards integration and high frequency. At present, the development of integrated circuits is rapid, and electronic components are constantly upgraded following Moore's Law. In addition to miniaturization and integration, they are also developing in the direction of planarization, high stability, high precision, and low loss. Due to its own characteristics, magnetic devices have not yet been fully integrated. Therefore, it i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/14H01F41/20
CPCC23C14/14C23C14/30H01F41/20
Inventor 孙科张婧何宗胜余忠邬传健蒋晓娜兰中文
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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