Magnetoresistive integrated stress sensor and preparation method and application thereof

A technology of stress sensor and magnetoresistance, which is applied in the field of magnetoresistance integrated stress sensor and its preparation, can solve the problems that the detection of stress magnitude and direction cannot be realized

Pending Publication Date: 2021-06-22
ZHEJIANG HIKSTOR TECHOGY CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional integrated magnetoresistive sensors (AMR, giant magnetoresistance, tunnel junction magnetoresistance) are mostly made of magnetic metal materials with small magnetostriction coefficients. detection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetoresistive integrated stress sensor and preparation method and application thereof
  • Magnetoresistive integrated stress sensor and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] see figure 1 , a magnetoresistive integrated stress sensor, comprising: a substrate; a permanent magnetic thin film layer, the permanent magnetic thin film layer is on one side of the substrate; a piezoelectric thin film layer, the piezoelectric thin film layer is on the substrate on the other side relative to the permanent magnetic thin film layer , for outputting voltage under external stress; and a metal electrode, the metal electrode is on the piezoelectric thin film layer.

[0028] The role of the base is to support the magnetic film layer and the piezomagnetic film layer. The permanent magnetic film applies a static magnetic field, which is equivalent to a magnet, so that the magnetic moment in the piezomagnetic film faces a specific direction. Once there is an external stress, the pressure of the piezomagnetic film changes. The distribution of magnetic moment orientation can test the direction of external stress. When the piezomagnetic film layer is subjected to...

Embodiment 2

[0041]A method for preparing a magnetoresistive integrated stress sensor, comprising: fixing a permanent magnetic thin film layer on a clean substrate; fixing a piezomagnetic thin film layer on the other side of the clean substrate relative to the fixed permanent magnetic thin film material; Photolithographic bridges and metal electrodes are grown on the piezoelectric thin film layer; negative photoresist photolithographic electrode patterns are used at both ends of the bridge, and the negative photoresist is peeled off to connect with the metal electrodes after the electrode pattern is formed.

[0042] The specific preparation method is as follows: cleaning the substrate; using electroplating, sputtering or permanent magnet sheet pasting on the substrate to form a permanent magnetic material layer; using magnetron sputtering, evaporation, chemical plating, laser pulse deposition or molecular beam epitaxy on the front of the substrate Growth of piezoelectric thin film material,...

Embodiment 3

[0045] Embodiment 3: Application of a magnetoresistive integrated stress sensor, based on the magnetoresistive integrated stress sensor used in medical health monitoring, restaurant occupancy monitoring, automotive electronics, wearable electronic devices, smart home and industrial robots .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to the field of communication, and discloses a magnetoresistive integrated stress sensor and a preparation method and application thereof. Themagnetoresistive integrated stress sensor comprises a substrate; a permanent magnet thin film layer which is arranged on one side of the substrate; a piezomagnetic thin film layer which is arranged on the substrate on the other side opposite to the permanent magnet thin film layer and is used for receiving external stress and outputting voltage; and a metal electrode which is arranged on the piezomagnetic thin film layer. According to the invention, the magnetic moment of the material can be changed through the change of the magnetic conductivity of the bridge on the piezomagnetic film layer, and the change of the magnetic moment of the material can cause the change of the magnetoresistance of the material, so that the measurement of the direction and the magnitude of the pressure is realized.

Description

technical field [0001] The invention relates to the technical field of electronic materials and sensors, in particular to a magnetoresistance integrated stress sensor and its preparation method and application. Background technique [0002] Human beings have used magnetic sensors for more than two thousand years. The earliest people sailed on the vast sea by measuring the direction of the earth's magnetic field. With the advancement of science and technology and the continuous development of the information society, many industries, especially agriculture, industry, and information industries, have begun to rapidly change from the manual operation mode to the artificial intelligence and precision operation mode. At this time, the demand for smart devices has risen sharply, and the demand for smart detection sensors has also increased rapidly. So a variety of magnetoresistive sensors were invented for different occasions. However, human beings have more and more types of da...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/22
CPCG01L1/2262
Inventor 孟皓迟克群金立川唐晓莉
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap