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Lead zirconate titanate piezoelectric film, and preparation method and application thereof

A lead zirconate titanate piezoelectric and thin film technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. It can solve the problems of process complexity, piezoelectric performance degradation, domain instability and reversal, and influence on driving accuracy, etc., and achieve the effects of easy industrialization, stable performance, and wide applicability

Active Publication Date: 2021-06-08
QILU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (2) The nonlinear piezoelectric response caused by these complex structures, especially the hysteresis effect of electro-induced displacement, affects its driving accuracy;
[0007] (3) The PZT composition of x ~ 0.52 corresponds to "soft" ferroelectrics. The piezoelectric effect is enhanced while the coercive field strength is reduced. When the voltage fluctuates, it is easy to cause domain instability and flip, resulting in a decrease in its piezoelectric performance. even lost
Doping can make it "hard" again and increase its coercive field strength, but it is often accompanied by an increase in process complexity and a decrease in piezoelectric performance

Method used

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  • Lead zirconate titanate piezoelectric film, and preparation method and application thereof
  • Lead zirconate titanate piezoelectric film, and preparation method and application thereof
  • Lead zirconate titanate piezoelectric film, and preparation method and application thereof

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preparation example Construction

[0040] In a second aspect, the present invention provides a method for preparing the lead zirconate titanate piezoelectric thin film, comprising the following steps:

[0041]Deposit the bottom electrode and buffer layer sequentially on the substrate, and radio frequency magnetron sputtering PZT dielectric layer on the buffer layer;

[0042] Then the deposited PZT thin film system is subjected to rapid annealing;

[0043] After annealing and cooling down, a top electrode is deposited on the PZT dielectric layer.

[0044] In some embodiments, choose SiO 2 / (100)Si substrate is used as the substrate, and after ultrasonic cleaning with acetone and alcohol to remove surface organic impurities, it is cleaned with deionized water and dried, and finally placed in a vacuum coating chamber and heated to 200 ~400°C.

[0045] In some embodiments, the deposition method of the bottom electrode is as follows: using metal Ti and Pt targets, sequentially sputtering on the silicon substrate ...

Embodiment

[0063] (1) Treatment of the substrate

[0064] Cleaning and mounting: SiO with (100) or (111) orientation 2 / Si substrate, the substrate was ultrasonically cleaned with acetone and alcohol in turn, rinsed with deionized water, and finally dried and placed on the substrate holder in the vacuum chamber. After the chamber is closed, the system is pumped to 3Pa with a mechanical pump, and then vacuumed to 10 Pa with a molecular pump. -4 Pa.

[0065] Heating: Introduce Ar gas into the vacuum chamber, adjust the flow rate, control the air pressure at 0.8-3Pa, and then heat the substrate to reach a temperature of 200-400°C.

[0066] (2) Preparation of pure metal bottom electrode

[0067] Using Ti target and Pt target, they were sequentially deposited on the substrate (Pt on Ti) by radio frequency magnetron sputtering in a vacuum chamber. The Ar gas flow during sputtering deposition is controlled at 30-100 sccm, the gas pressure during sputtering is kept at 0.1-3Pa, and the target...

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Abstract

The invention discloses a lead zirconate titanate piezoelectric film, and a preparation method and application thereof. By combining a low-temperature coating and rapid annealing process on a conductive perovskite buffer layer, a height (001) oriented PZT film and a piezoelectric cantilever beam structure thereof are formed on silicon substrates with different orientations (100 or 111). Meanwhile, by combining interface engineering and defect engineering, self bias voltage (delta Vc to 4V) is achieved in the PZT film, and the stability of the PZT film in piezoelectric application is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of electronic material development and film material preparation, and in particular relates to a lead zirconate titanate piezoelectric film and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Ferroelectric materials, especially ferroelectric thin films, are one of the important raw materials for functional devices in the electronics industry, which is mainly due to their excellent properties such as ferroelectricity, piezoelectricity, pyroelectricity, dielectricity, and electro-optic properties. Among them, the use of its piezoelectric effect can realize the mutual ...

Claims

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Application Information

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IPC IPC(8): H01L41/187H01L41/316H01L41/39H01L41/09C23C14/35C23C14/02C23C14/08
CPCC23C14/352C23C14/025C23C14/08C23C14/0036H10N30/2047H10N30/8554H10N30/076H10N30/093Y02P70/50
Inventor 欧阳俊王莹莹
Owner QILU UNIV OF TECH
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