Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A temperature-resistant 1300°C frequency-selective wave-transparent/heat-insulating/stealth structure and its preparation method

A technology of frequency selection and wave penetration, which is applied in the direction of chemical instruments and methods, coatings, layered products, etc., can solve the problem that the electrical performance of periodic pattern dimensional stability cannot be effectively guaranteed, does not have heat insulation function, and affects frequency Select surface electrical properties and other issues to avoid the application of organic solvents and lead glass, facilitate large-scale engineering applications, and achieve large-scale engineering applications

Active Publication Date: 2022-04-01
NAT UNIV OF DEFENSE TECH
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Aiming at the deficiencies of the existing technology, Chinese Patent No. 201410551086.7 proposes a high-temperature-resistant frequency-selective surface wave-transparent material and its preparation method. 2 or TiN) or high-temperature-resistant metal (one of platinum, tungsten or molybdenum) as the frequency-selective surface material. From the perspective of the selected material system, it has a certain temperature resistance, but there are also the following obvious deficiencies: 1) The porous Silicon nitride ceramic materials have low strength, poor toughness, insufficient thermal shock resistance, and poor reliability; 2) TiB used 2 Or TiN conductive ceramic materials and tungsten and molybdenum metal materials have poor high-temperature oxidation resistance. When used in a high-temperature oxygen-enriched environment, serious electrical performance degradation will occur due to oxidation, which will affect the electrical properties of the frequency selection surface.
At the same time, the wave-transmitting material used in this patent is a multi-layer structure, which is relatively complex, and the different layers are bonded by aluminum dihydrogen phosphate adhesive, which has the problem of low interlayer strength.
In addition, the technical solution disclosed in this patent does not use the corresponding technology to treat the surface of the porous silicon nitride substrate, so the frequency selective surface prepared on the porous substrate must have the disadvantage of poor quality, and the dimensional stability of the periodic pattern And the electrical performance of each period unit cannot be effectively guaranteed
Chinese patent No. 2011610837457.7 invented a high-temperature-resistant frequency-selective wave-transmitting structure. Through material system and structure optimization, this patent can better solve the problems of poor mechanical properties of materials and insufficient oxidation resistance of frequency-selective surfaces in Chinese patent No. 201410551086.7. , but there are still the following deficiencies: 1) The high-temperature resistant frequency selection wave-transparent structure does not have the function of heat insulation; 2) The temperature resistance can only reach 700~800 °C, and the temperature resistance is not high; 3) The surface of the wave-transparent layer composite material needs Only by preparing a modified adhesive layer can the preparation of a high-quality frequency selective surface be achieved, and the process is complex; 4) The outer surface of the frequency selective layer has no effective protection, and there is a risk of peeling off the frequency selective layer under high thermal loads

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A temperature-resistant 1300°C frequency-selective wave-transparent/heat-insulating/stealth structure and its preparation method
  • A temperature-resistant 1300°C frequency-selective wave-transparent/heat-insulating/stealth structure and its preparation method
  • A temperature-resistant 1300°C frequency-selective wave-transparent/heat-insulating/stealth structure and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A frequency-selective wave-transparent / heat-insulating / stealth structure with a temperature resistance of 1300°C such as figure 1 As shown, the outer surface is defined by the incident direction of electromagnetic waves, and includes a heat insulating layer 1, a wave-transmitting layer 2, a frequency selective layer 3, and a ceramic protective layer 4 in sequence from the inside to the outside. The heat insulation layer is mullite fiber felt reinforced silica airgel composite material, the microwave dielectric constant of mullite fiber felt reinforced silica airgel composite material is 1.35, the dielectric loss is 0.008, and the density is 0.4g / cm 3 , the thermal conductivity at room temperature is 0.004W / m·K, and after hydrophobic treatment, the mass moisture absorption rate is less than 1%. The wave-transparent layer is made of quartz fiber needle-punched parts reinforced silica composite material, the size of defects such as surface holes is not greater than 0.5mm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
surface roughnessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of high-temperature functional materials, and specifically discloses a frequency-selective wave-transmitting / heat-insulating / stealth structure with a temperature resistance of 1300°C and a preparation method thereof. The frequency-selective wave-transmitting / heat-insulating / stealth structure is defined by the incident direction of electromagnetic waves It is the outer surface, including heat insulation layer, wave transparent layer, frequency selective layer and ceramic protective layer from inside to outside. The invention also provides a preparation method of the frequency-selective wave-transparent / heat-insulating / stealth structure. The frequency selective wave transparent / heat insulation / stealth structure of the present invention has the advantages of heat insulation, wave transmission, frequency selection, and stealth multifunctional integration. Through structure and material optimization, it can withstand high temperatures of 1300 ° C. The outer surface is prepared with ceramic protection. layer, which has the advantages of anti-ablation and heat insulation.

Description

technical field [0001] The invention belongs to the technical field of high-temperature functional materials, and in particular relates to a frequency-selective wave-transmitting / heat-insulating / stealth structure with a temperature resistance of 1300°C and a preparation method thereof. Background technique [0002] Wave-transparent materials and structures (radome, antenna window, radome, etc.) are important components of antennas and communication systems. They play an important role in protecting antennas and communication systems, maintaining the shape of aircraft, etc. Feature requirements to make it work. In addition, in order to ensure the stealth and anti-jamming capabilities of the aircraft antenna system, wave-transparent materials and structures are required to have frequency-selective wave-transmitting characteristics. [0003] The frequency selective surface is a single-screen or multi-screen periodic array structure composed of a large number of passive resonan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/00B32B9/04B32B5/06B32B38/00B32B38/08B32B38/16B32B38/14C04B30/02C04B35/185C04B35/622
CPCB32B5/02B32B5/18B32B5/245B32B38/0036B32B38/00B32B5/06B32B38/08B32B38/164B32B38/0012B32B38/145C04B35/185C04B35/62222C04B30/02B32B2038/008B32B2260/021B32B2255/20B32B2255/02B32B2266/126B32B2307/306B32B2307/558C04B2235/3418C04B14/4656
Inventor 刘海韬姜如黄文质甘霞云张琳孙逊
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products