Preparation method of radiation-proof efficient gallium arsenide solar cell

A technology of solar cells and gallium arsenide, applied in the field of solar cells, can solve the problems of difficult to further improve the anti-radiation performance, slow progress, poor anti-irradiation performance, etc., to reduce the recombination probability, improve the absorption capacity, and improve the open circuit voltage. Effect

Active Publication Date: 2021-05-28
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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Problems solved by technology

Another important parameter that affects the application of solar cells—radiation attenuation has been slow in recent years, mainly because of the poor radiation resistance of (In)GaAs materials used as middle cells.
The current main method is generally to introduce a distributed Bragg reflector (DBR), but the conventional DBR technology uses a single reflection wavelength, and it is difficult to further improve the anti-radiation performance. Therefore, according to the characteristics of the spectrum and the material of the battery area, the present invention A new type of spectral reflection structure is designed to greatly increase the absorption rate of the incident spectrum, reduce the thickness of the battery area, and improve the radiation resistance of solar cells, etc.

Method used

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  • Preparation method of radiation-proof efficient gallium arsenide solar cell
  • Preparation method of radiation-proof efficient gallium arsenide solar cell
  • Preparation method of radiation-proof efficient gallium arsenide solar cell

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preparation example Construction

[0034] The following is attached Figure 1~3 This application will be described in detail. in, figure 1 Shown is a schematic structural diagram of the radiation-resistant high-efficiency gallium arsenide solar cell in this application. The solar cell consists of Ge substrate S1, bottom cell S2, buffer layer S3, mid-bottom tunnel junction S4, multi-reflector Center Bragg reflector S5, middle cell S6, middle top tunnel junction S7, top cell S8 and capping layer S9. The solar cell adopts multi-reflection center Bragg reflector technology to reflect back the light in the absorption band of the entire cell area to improve the solar cell. The absorption of incident sunlight by the region can further reduce the thickness of the battery region, reduce the reverse saturation current density, and improve the radiation resistance; use AlGaInP / GaInP material as the Bragg reflector material, and use the high radiation resistance of phosphide , to reduce the damage of the Bragg mirror mat...

Embodiment 1

[0053] A radiation-resistant high-efficiency gallium arsenide solar cell, from bottom to top are Ge substrate S1, bottom cell S2, buffer layer S3, middle bottom tunnel junction S4, multi-reflection center Bragg reflector S5, middle cell S6, middle cell The top tunnel junction S7, the top cell S8 and the capping layer S9. The specific production method is as follows:

[0054] (1) On a P-type Ge substrate, pass PH at high temperature 3 In the form of diffusion, the emitter area of ​​the bottom cell S2 is formed, and then the GaInP nucleation layer is grown, and the nucleation layer serves as the window layer of the bottom cell S2 at the same time;

[0055] (2) Then grow GaAs buffer layer S3, the thickness of GaAs buffer layer S3 is 0.4 μm;

[0056] (3) Then grow the mid-bottom tunneling junction S4, and the mid-bottom tunneling junction S4 is N ++ GaAs / P ++ GaAs structure, where N ++ The thickness of GaAs is 0.02μm, and the doping concentration is 3×10 19 / cm 3 ;P ++ The...

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Abstract

The invention relates to a preparation method of an anti-radiation efficient gallium arsenide solar cell, and belongs to the technical field of solar cells. According to the preparation method of the anti-radiation efficient gallium arsenide solar cell, the solar cell sequentially comprises a Ge substrate, a bottom cell, a buffer layer, a middle bottom tunnel junction, a multi-reflection center Bragg reflector, a middle cell, a middle top tunnel junction, a top cell and a cap layer from bottom to top; the multi-reflection center Bragg reflector is composed of n groups of AlGaInP layers and GaInP layers which grow alternately; and by designing a novel spectral reflection structure, under the condition that it is guaranteed that a cell structure sufficiently absorbs incident light, the thickness of a cell area is reduced, the carrier recombination probability is reduced, and the open-circuit voltage and the anti-irradiation performance of the solar cell are improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a radiation-resistant high-efficiency gallium arsenide solar cell. Background technique [0002] Since the world's first artificial earth satellite "Satellite 1" entered space on October 4, 1957, aerospace technology has made great progress. The high power, high reliability, long life and micro Miniaturization also puts forward new requirements, and the power supply mode of the spacecraft power system has changed from a single chemical battery power supply to a solar cell-battery joint power supply. Gallium arsenide triple-junction solar cells have replaced silicon solar cells and become the main power source of aerospace vehicles due to their excellent characteristics such as high photoelectric conversion efficiency, better high temperature resistance, and stronger space radiation resistance. The competitive new-generation space main power supply has a...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/054H01L31/0304H01L31/041H01L31/078
CPCH01L31/03046H01L31/078H01L31/1844H01L31/1852H01L31/041H01L31/0547Y02E10/52Y02E10/544Y02P70/50
Inventor 徐培强王克来宁如光林晓珊潘彬王向武
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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