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Preparation method of rare earth cerium doped gallium oxide nano material

A nano-material, gallium oxide technology, applied in the field of rare earth doping production, can solve the problems of high production equipment requirements and complicated preparation process, and achieve the effect of low equipment requirements, simple process steps and small particles

Active Publication Date: 2021-04-27
GUILIN UNIV OF ELECTRONIC TECH
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  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a preparation method of rare earth cerium-doped gallium oxide nanomaterials, aiming to solve the technical problems of complex preparation process and high production equipment requirements of rare earth cerium-doped gallium oxide nanomaterials in the prior art

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  • Preparation method of rare earth cerium doped gallium oxide nano material
  • Preparation method of rare earth cerium doped gallium oxide nano material
  • Preparation method of rare earth cerium doped gallium oxide nano material

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preparation example Construction

[0031] see figure 1 , the invention provides a preparation method of rare earth cerium-doped gallium oxide nanomaterials, comprising the following steps:

[0032] S1: Clean the silicon substrate and dry it for later use;

[0033] S2: Put gallium oxide, cerium oxide and carbon powder into a ceramic bowl to fully grind to obtain a mixed powder;

[0034] S3: placing the mixed powder in a quartz boat, inverting the front side of the silicon substrate on the quartz boat, and the silicon substrate is located above the mixed powder;

[0035] S4: push the quartz boat into the temperature center of the tube furnace, and draw a vacuum to the tube furnace;

[0036] S5: Introduce argon gas into the tube furnace, and raise the temperature to the set temperature at an average increasing rate;

[0037] S6: Pass argon-oxygen mixed gas into the tube furnace for 1.5 hours, and take out the mixed powder after cooling.

[0038] Further, in the process of drying the silicon substrate after cle...

specific Embodiment 1

[0048] S101: ultrasonically clean the silicon substrate with acetone, ethanol and deionized water for 10 min respectively in sequence, then blow dry with nitrogen gas, wash and dry for later use;

[0049] S102: according to the ratio of the amount of gallium oxide / cerium oxide being 9.5:0.5, the powder mixed in the ceramic bowl is fully ground together with carbon powder according to the ratio of 1:2 to obtain the first mixed powder;

[0050] S103: placing the above-mentioned first mixed powder in a quartz boat, and then placing the silicon substrate pretreated in step S101 at a position 1.2 cm above the mixed powder in the quartz boat;

[0051] S104: Then push the quartz boat to the temperature center of the tube furnace, tighten the channel, pump argon after vacuuming, raise the temperature to 1150°C at a rate of 10°C / min, and pass in a mixed gas with an argon-oxygen ratio of 2:1, After maintaining for 1.5h, take it out after cooling with the furnace. Wherein the gas flow v...

specific Embodiment 2

[0054] S201: ultrasonically clean the silicon substrate with acetone, ethanol and deionized water for 10 min respectively in sequence, then blow dry with nitrogen gas, wash and dry for later use;

[0055] S202: According to the ratio of the amount of gallium oxide / cerium oxide being 9.5:0.5, the powder mixed in the ceramic bowl is fully ground together with carbon powder according to the ratio of 1:2 to obtain the second mixed powder;

[0056] S203: placing the above-mentioned second mixed powder in a quartz boat, and then placing the silicon substrate pretreated in step S201 at a position 1.2 cm above the mixed powder in the quartz boat;

[0057]S204: Then push the quartz boat to the temperature center of the tube furnace, tighten the channel, pump argon after vacuuming, raise the temperature to 1100°C at a rate of 10°C / min, and pass in a mixed gas with an argon-oxygen ratio of 2:1, After maintaining for 1.5h, take it out after cooling with the furnace. Wherein the gas flow ...

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Abstract

The invention discloses a preparation method of a rare earth cerium doped gallium oxide nano material. The preparation method comprises the following steps of: preparing a silicon substrate; fully grinding gallium oxide, cerium oxide and carbon powder to obtain mixed powder; putting the mixed powder into a tubular furnace, introducing argon, and heating for pre-reaction; and under the action of argon-oxygen mixed gas, cooling to obtain the rare earth cerium doped gallium oxide nano material. The rare earth cerium-doped gallium oxide nano material is prepared through a carbon thermal reduction method under the condition of not adding a surface metal catalyst, the method is simple in process step, low in cost, low in equipment requirement and beneficial to industrial production, and the problems that in the prior art, the preparation process of the rare earth cerium-doped gallium oxide nano material is complex, and the requirement on manufacturing equipment is high are solved.

Description

technical field [0001] The invention relates to the technical field of rare earth doping production, in particular to a preparation method of rare earth cerium doped gallium oxide nanometer material. Background technique [0002] Rare earth elements have irreplaceable excellent magnetic, optical, and electrical properties, which play a huge role in improving product performance, increasing product varieties, and increasing production efficiency. Because rare earth has great effect and low dosage, it has become an important element to improve product structure, increase technological content, and promote technological progress in the industry. It has been widely used in metallurgy, glass ceramics, and new materials. [0003] As a wide bandgap semiconductor material, gallium oxide has high breakdown electric field, stable physical and chemical properties, and strong radiation resistance. It also has broad application prospects in optoelectronic fields such as electronic nano-m...

Claims

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Application Information

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IPC IPC(8): C01G15/00C01F17/10C01F17/235C09K11/62B82Y20/00B82Y30/00B82Y40/00
CPCC01G15/00C01F17/10C01F17/235C09K11/7716B82Y20/00B82Y30/00B82Y40/00C01P2002/72C01P2004/03C01P2004/64
Inventor 张法碧王长杰周娟李海鸥孙堂友傅涛肖功利陈永和刘兴鹏李琦洪莉邓艳容
Owner GUILIN UNIV OF ELECTRONIC TECH
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