Phase change memory based on nano current channel

Abstract

The invention discloses a phase change memory based on a nano current channel. A used nano current channel layer structure is used for limiting the path of a current, so that the current enters a phase change layer from a high-conductivity nano crystal grain when flowing through the layer, and the current is limited in the nano current channel. According to the nanoscale conductive channel, the contact area between the phase change layer and the electrode layer is greatly reduced, the current density of a local contact part is greatly improved, and the heat production efficiency of current in the phase change layer is improved. And meanwhile, the insulating heat-insulating material with low conductivity and low heat conductivity prevents heat in the phase change layer from being dissipated to the electrode layer, so that the electric heat utilization efficiency of the phase change layer is improved. Compared with a phase change unit which is as small as possible and manufactured by adopting a more advanced manufacturing process, the phase change memory can break through the process limitation, further reduces the effective contact area of the electrode and the phase change material, and is simple in process, so the phase change memory easily realizes the reduction of operation power consumption.

Description

technical field [0001] The invention belongs to the technical field of phase-change memory, and more particularly relates to a phase-change memory based on a nanometer current channel. Background technique [0002] With the advent of the information age, memory plays an increasingly important role in our daily life. At present, research on memory has been developing in the direction of high speed, low power consumption, and high stability. Among them, the phase change memory (PCRAM) made by utilizing the phase change property of materials has great potential in the semiconductor market. [0003] The basic principle of phase-change memory is that phase-change materials can be reversibly switched between crystalline and amorphous states, and use the huge difference in resistance between different states of the material to realize "1" and "0" data storage. The commonly used phase-change materials are chalcogenides. By controlling the amplitude and pulse width of the applied pu...

AI Technical Summary

Problems solved by technology

[0007] Aiming at the defects of the prior art, the present invention provides a phase-change memory based on a nano-current channel, the purpose of which is to solve the problem of high process cost and difficulty in reducing writing power consumption by changing the structure of the existing device, and Increase the current density in the contact area, improve the heat generation efficiency, and improve the heat utilization efficiency, so that the phase change memory can reduce the write power consumption without reducing the cell size and without improving the process.

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